Related papers: Quantum oscillations in a hexagonal boron nitride-…
We report magnetotransport measurements on magnetically doped (Bi,Sb)$_2$Te$_3$ films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and…
The substrate material of monolayer graphene influences the charge carrier mobility by various mechanisms. At room temperature, the scattering of conduction electrons by phonon modes localized at the substrate surface can severely limit the…
We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3--9 nm), doping densities ($10^{18}$--$10^{20}$ cm$^{-3}$),…
Inspired by the successful synthesis of several allotropes, boron sheets have been one of the hottest spot areas of focus in various fields. Here, we study phonon transport in three types of boron nanoribbons with zigzag and armchair edges…
We analyze the transport properties of curved, three-dimensional graphite samples in strong magnetic fields. Focusing on a millimeter-scale graphite cylinder as a prototypical curved object, we perform longitudinal and Hall voltage…
Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…
Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of…
We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to move the Fermi level into the…
Zigzag edges of graphene have long been predicted to exhibit magnetic electronic state near the Fermi level, which can cause spin-related phenomena and offer unique potentials for graphene-based spintronics. However, the magnetic conduction…
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…
Bottom-up on-surface synthesized nanoporous graphenes (NPGs), realized as 2D arrays of laterally covalently bonded $\pi$-conjugated graphene nanoribbons (GNRs), are a family of carbon nanomaterials that are receiving increasing attention…
Correlating structure with electronic functionality is central to the engineering of quantum materials and devices whose properties depend sensitively on disorder. Transmission electron microscopy (TEM) offers high spatial resolution…
We describe magnetotransport experiments performed on Hall crosses made from quantum wires at LaAlO3/SrTiO3 interfaces. Shubnikov-de Haas oscillations measured in a 14-nm wide structure exhibit modulations that are consistent with…
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from…
A newly identified magnetic phase called altermagnet is being actively studied because of its unprecedented spin-dependent phenomena. Among the candidate materials, CrSb has a particularly high ordering temperature and a large…
Single crystals of LaNiSb$_3$ were grown using the Sn flux method. Structural characterization confirms that LaNiSb$_3$ crystallizes in the orthorhombic $Pbcm$ space group with lattice parameters $a = 13.0970(2)\,\mathrm{\AA}$, $b =…
Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their…
We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a…