We report magnetotransport measurements on magnetically doped (Bi,Sb)2Te3 films grown by molecular beam epitaxy. In Hallbar devices, logarithmic dependence on temperature and bias voltage are obseved in both the longitudinal and anomalous Hall resistance. The interplay of disorder and electron-electron interactions is found to explain quantitatively the observed logarithmic singularities and is a dominant scattering mechanism in these samples. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.
@article{arxiv.1711.10675,
title = {Logarithmic singularities and quantum oscillations in magnetically doped topological insulators},
author = {Debaleena Nandi and Inti Sodemann and Kevin Shain and Gil-Ho Lee and Ko-Fan Huang and Cui-Zu Chang and Yunbo Ou and Shu-Ping Lee and Jonathan Ward and Jagadeesh S. Moodera and Philip Kim and Amir Yacoby},
journal= {arXiv preprint arXiv:1711.10675},
year = {2018}
}