Related papers: Silicon sensors with resistive read-out: Machine L…
We report the application of the resistive anode readout method on a two dimensional imaging GEM detector. The resistive anode consists of $6\times6$ cells with the cell size $6~\mathrm{mm}\times6~\mathrm{mm}$. New electronics and DAQ…
We present our latest ASIC, which is used for the readout of Cadmium Telluride double-sided strip detectors (CdTe DSDs) and high spectroscopic imaging. It is implemented in a 0.35 um CMOS technology (X-Fab XH035), consists of 64 readout…
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are…
We report a concept low gain avalanche diode (LGAD) detector to be integrated into TOPSiDE, which is being developed for EIC (Electron-Ion Collider) project. The LGAD detector will be taking its place to resolve requirement of…
To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche…
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche…
This contribution reports on characterisation results of a large-area (2$~\mathrm{cm}^2$) small pitch (55$~\mu$m) inverse Low-Gain Avalanche Detector (iLGAD), bonded to a Timepix3 readout chip. The ilGAD sensors were produced by Micron…
Production of the High Granularity Timing Detector for the ATLAS experiment at High Luminosity LHC requires over 21000 silicon sensors based on Low Gain Avalanche Diode (LGAD) technology. Their radiation hardness is monitored as a part of…
Low-Gain Avalanche Diode (LGAD) sensors, offering timing resolutions of the order of tens of picoseconds, are being widely adopted in particle physics experiments and related applications. As these applications scale to large numbers of…
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the…
Despite the advancements in quality and efficiency achieved by 3D Gaussian Splatting (3DGS) in 3D scene rendering, aliasing artifacts remain a persistent challenge. Existing approaches primarily rely on low-pass filtering to mitigate…
Multiple-Amplifier Sensing (MAS) charge-coupled devices (CCDs) have recently been shown to be promising silicon detectors that meet noise sensitivity requirements for next generation Stage-5 spectroscopic surveys and potentially, future…
The main contribution of this paper is an approach for introducing additional context into state-of-the-art general object detection. To achieve this we first combine a state-of-the-art classifier (Residual-101[14]) with a fast detection…
The High Granularity Timing Detector (HGTD) will be installed in the ATLAS experiment as part of the Phase-II upgrade for the High Luminosity-Large Hadron Collider (HL-LHC). It will mitigate pile-up effects in the forward region, and…
Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timing measurements employing a thin multiplication layer to increase the output signal. A multipurpose read-out board hosting a low-cost, low-power fast amplifier was designed…
Microwave reflectance probed photoconductivity (or $\mu$-PCD) measurement represents a contactless and non-invasive method to characterize impurity content in semiconductors. Major drawbacks of the method include a difficult separation of…
Low-Gain Avalanche Diodes are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the Low-Gain…
The RD51 collaboration maintains a common infrastructure at CERN for its R & D activities, including two beam telescopes for test beam campaigns. Recently, one of the beam telescopes has been equipped and commissioned with new multi-channel…
3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…
Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip…