Related papers: Topological Metal MoP Nanowire for Interconnect
Arrays of parallel metallic nanowires are shown to provide a tunable, robust, and versatile platform for plasmon interconnects, including high-curvature turns with minimum signal loss. The proposed guiding mechanism relies on gap plasmons…
Elastic wave manipulation is important in a wide variety of scales in applications including information processing in tiny elastic devices and noise control in big solid structures. The recent emergence of topological materials opens a new…
The generation of high magnetic fields requires materials with high electric conductivity and good strength properties. Cu/Nb composites are considered to be good candidates for this purpose. In this work we aim to predict, from theory, the…
In the wake of dwindling Moore's Law, to address the rapidly increasing complexity and cost of fabricating large-scale, monolithic systems-on-chip (SoCs), the industry has adopted dis-aggregation as a solution, wherein a large monolithic…
Higher-order topological insulators exhibit multidimensional topological physics and unique application values due to their ability of integrating stable boundary states at multiple dimensions in a single chip. However, for…
Finding a clear signature of topological superconductivity in transport experiments remains an outstanding challenge. In this work, we propose exploiting the unique properties of three-dimensional topological insulator nanowires to generate…
Topological semimetals are renowned for exhibiting large, unsaturated magnetoresistance arising from ultrahigh carrier mobility and electron-hole compensation. However, such behaviors remain poorly understood in iron-based superconductors…
Structural colours have drawn wide attention for their potential as a future printing technology for various applications, ranging from biomimetic tissues to adaptive camouflage materials. However, an efficient approach to realise robust…
Coherent topologically close-packed nanoplates in magnesium alloys can effectively improve strength and creep resistance.However, the formation mechanisms of several metastable TCP nanoplates remain unclear, and the traditional…
A positive, non-saturating and dominantly linear magnetoresistance is demonstrated to occur in the surface state of a topological insulator having a wavevector-linear energy dispersion together with a finite positive Zeeman energy…
Flexible electronics are attracting attention due to the increasing demand for lightweight, bendable devices that can conform to various surfaces, including human skin. Although indium tin oxide (ITO) is widely used for electrical…
Nanostructured and architectured copper niobium composite wires are excellent candidates for the generation of intense pulsed magnetic fields (>90T) as they combine both high strength and high electrical conductivity. Multi-scaled Cu-Nb…
Nanoporous Cu (NPC), synthesized by chemical dealloying of brass, holds significant potential for catalysis of electrochemical CO2 and CO reduction, owing to the optimal binding energy of Cu with *CO and *H intermediates, and the abundance…
In this report, we scrutinize the thickness dependent resistivity data from the recent literature on electrical transport measurements in topological insulators. A linear increase in resistivity with increase in thickness is expected in the…
Bicontinuous nanoporous materials possess remarkable mechanical properties, such as higher specific strength and lower specific modulus compared to fully dense materials combined with low densities and high specific surface areas.…
Topologically interlocked materials and structures, which are assemblies of unbonded interlocking building blocks, are promising concepts for versatile structural applications. They have been shown to exhibit exceptional mechanical…
Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and…
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved…
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition…
High-temperature superconductivity confined to nanometer-size interfaces has been a long standing goal because of potential applications^{1,2} and the opportunity to study quantum phenomena in reduced dimensions^{3,4}. However, this is a…