Related papers: Semiconductor membranes for electrostatic exciton …
We consider bosonic condensates of exciton-polaritons optically confined in elliptical traps. A superposition of two non-degenerated \textit{p}-type states of the condensate oriented along the two main axes of the trap is represented by a…
Large-scale quantum computers will require quantum gate operations between widely separated qubits. A method for implementing such operations, known as quantum gate teleportation (QGT), requires only local operations, classical…
Single-photon emitters are essential building blocks for quantum communication and photonic quantum technologies. However, realizing scalable, on-chip SPEs on a CMOS-compatible platform remains a significant challenge. Here, we propose and…
Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial…
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
Quantum electrodynamics of excitons in a cavity is shown to be relevant to quantum operations. We present a theory of an integrable solid-state quantum controlled-phase gate for generating entanglement of two photons using a coupled…
The spectral properties of one exciton trapped in a self-assembled multi-layered quantum dot is obtained using a high precision variational numerical method. The exciton Hamiltonian includes the effect of the polarization charges, induced…
Multimodal device operations are essential to advancing the integration of 2D semiconductors in electronics, photonics, information and quantum technology. Precise control over carrier dynamics, particularly exciton generation and…
We show that when following a simple cavity design metric, a quantum well exciton-microcavity photon coupling constant can be larger than the exciton binding energy in GaAs based optical microcavities. Such a very strong coupling…
This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise…
Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in…
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2…
Phase transitions induced by short optical pulses is a new mainstream in studies of cooperative electronic states. Its special realization in systems with neutral-ionic transformations stands out in a way that the optical pumping goes to…
We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultra-low-temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer,…
Semiconductor quantum dots embedded in circular Bragg gratings (CBGs) are among the most efficient integrated single-photon sources. However, the fully etched rings of conventional CBGs restrict the implementation of charge and Stark tuning…
We have succeeded in trapping indirect excitons in coupled quantum wells in a harmonic potential minimum via inhomogeneous applied stress and electric field. These excitons exhibit a strong Stark shift (over 60 meV), long lifetime (100 ns),…
Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures…
The coherence and fidelity of quantum dot (QD) spin qubits are fundamentally limited by charge noise arising from electrically active trap states at oxide interfaces, heterostructure boundaries, and within the bulk semiconductor. These…
Nonlinear optical response and optical coherence of excitons in semiconductor dense quantum dots in GaAs single quantum wells has been studied by using photon echo techniques. At low temperatures, the optical coherence is estimated to be 2…