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III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical…
We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties…
We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
Semiconductor quantum dots (QDs) offer outstanding quantum-optical properties, making them highly attractive for quantum information technologies. However, combining wide-range electrical tunability, efficient photon extraction,…
The realization of quantum functionalities with polaritons in an all-semiconductor platform requires the control of the energy and spatial overlap of the wave functions of single polaritons trapped in potentials with precisely controlled…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
An interesting approach to achieve quantum gate operations in a solid state device is to implement an optically driven quantum gate using two vertically coupled self-assembled quantum dots, a quantum dot molecule (QDM). We present a…
A computationally efficient, self-consistent complex scaling approach to calculating characteristics of excitons in an external electric field in quantum wells is introduced. The method allows one to extract the resonance position as well…
The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However,…
It is shown that quantum interference can be employed to create an exciton transistor. An applied potential gates the quasi-particle motion and also discriminates between quasi-particles of differing binding energy. When implemented within…
Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These…
We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under…
Eliminating the fine structure splitting (FSS) of excitons in self-assembled quantum dots (QDs) is essential to the generation of high quality entangled photon pairs. It has been shown that the FSS has a lower bound under uniaxial stress.…
Excitonic systems localized in a single InAs/GaAs parabolic quantum dot are studied theoretically using an unrestricted Hartree-Fock method. The binding energies of excitons, conventional biexcitons and quadrons - four particles system of…
Graphene quantum dots (QDs) are intensively studied as platforms for the next generation of quantum electronic devices. Fine tuning of the transport properties in monolayer graphene QDs, in particular with respect to the independent…
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel…
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs…
We present an experimental study on optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells near the crossover between $\varGamma-$ and $X$-valley confined electron states. The…
Time-resolved photoluminescence measurements show that the decay time for charged excitons in a GaAs two-dimensional electron gas increases by an order of magnitude at high magnetic fields. Unlike neutral excitons, the charged exciton…