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Advanced flexible electronics and soft robotics require the development and implementation of flexible functional materials. Magnetoelectric (ME) oxide materials can convert magnetic input into electric output and vice versa, making them…
Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and…
Understanding magnetoelectric coupling in emerging van der Waals multiferroics is crucial for developing atomically thin spintronic devices. Here, we present a comprehensive first-principles investigation of magnetoelectric coupling in…
Changes in strain can be used to modify electronic and magnetic properties in crystal structures, to manipulate nanoparticles and cells, or to control chemical reactions. The magneto-elastic (ME) effect--the change of magnetic properties…
The quest for electric-field control of nanoscale magnetic states such as skyrmions, which would impact the field of spintronics, has led to a challenging search for multiferroic materials or structures with strong magnetoelectric coupling…
Two-dimensional (2D) magnets have broad application prospects in the spintronics, but how to effectively control them with a small electric field is still an issue. Here we propose that 2D magnets can be efficiently controlled in a…
A-type antiferromagnetism, with an in-plane ferromagnetic order and the interlayer antiferromagnetic coupling, owns inborn advantages for electrical manipulations but is naturally rare in real materials except in those artificial…
Multiferroic materials exhibit the coexistence of magnetic and electric order. They are at the forefront of modern condensed matter physics due to their potential applications in next-generation technologies such as data storage, sensors,…
Ferroelectric altermagnets (FEAMs) offer unique magnetoelectric coupling properties by combining the characteristics of both antiferromagnets and ferromagnets, yet their multifunctional electric control remains largely unexplored. Here, we…
Two-dimensional (2D) multiferroic heterostructures present a promising platform for advanced spin devices by leveraging the coexisting ferromagnetic (FM) and ferroelectric (FE) orders. Through first-principles calculations and micromagnetic…
Two dimensional multiferroics with out of plane ferroelectricity hold significant promise for miniaturized magnetoelectric spin-orbit transistors, yet systems combining robust ferroelectricity and strong magnetoelectric coupling are…
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power…
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
We derive a sum rule to demonstrate that the static magnetoelectric (ME) effect is governed by optical transitions that are simultaneously excited via the electric and magnetic components of light. By a systematic analysis of magnetic point…
Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic…
Since the initial isolation of few-layer graphene, a plethora of two-dimensional atomic crystals has become available, covering almost all known materials types including metals, semiconductors, superconductors, ferro- and antiferromagnets.…
Altermagnetism (AM), a collinear magnetic phase with momentum-dependent spin splitting, is a promising candidate for strong magnetoelectric coupling. However, realizing direct and tunable coupling between ferroelectricity (FE) and AM within…
The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be…
The magnetoelectric (ME) effects are caused by interactions of the electrical and magnetic subsystems in a solid. Among the applications of ME effects, there are methods of magnetic reversal under the influence of an electrostatic field and…