A-type antiferromagnetism, with an in-plane ferromagnetic order and the interlayer antiferromagnetic coupling, owns inborn advantages for electrical manipulations but is naturally rare in real materials except in those artificial antiferromagnetic heterostructures. Here, a robust layered antiferromagnetism with a high N\'eel temperature is predicted in a MXene Cr2CCl2 monolayer, which provides an ideal platform as a magnetoelectric field effect transistor. Based on first-principles calculations, we demonstrate that an electric field can induce the band splitting between spin-up and spin-down channels. Although no net magnetization is generated, the inversion symmetry between the lower Cr layer and the upper Cr layer is broken via electronic cloud distortions. Moreover, this electric field can be replaced by a proximate ferroelectric layer for nonvolatility. The magneto-optic Kerr effect can be used to detect this magnetoelectricity, even if it is a collinear antiferromagnet with zero magnetization.
@article{arxiv.2304.04564,
title = {Electrical tuning of robust layered antiferromagnetism in MXene monolayer},
author = {Xinyu Yang and Ning Ding and Jun Chen and Ziwen Wang and Ming An and Shuai Dong},
journal= {arXiv preprint arXiv:2304.04564},
year = {2023}
}