Related papers: Amorphous p-Type Conducting Zn-x Ir Oxide (x > 0.1…
Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these…
Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…
Copper-doped zinc sulphide (ZnS:Cu) thin films were synthesized through pulsed laser ablation in an inert background gas on stationary and rotating substrates, and a comprehensive opto-electrical characterisation is presented. The…
An environmentally stable mesoscopic thin film of Au of certain thickness has been deposited thermally on top of a Ag+ implanted oxide substrate to develop a close to room temperature superconductor. This thin film has been deposited in two…
Nickel oxide (NiO) is a binary compound with a lot of applications in the present technology. NiO thin films were deposited by reactive sputtering magnetron under several voltage biases applied in the glass substrates (0, 50, 100, 200, 300,…
We studied the superconductivity of high-entropy Hf-Nb-Ta-Ti-Zr alloy films affected by structural order. While films deposited from the same target on a substrate with a room temperature are amorphous, and if superconducting, only at…
RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…
The magnetic domain structure of the multiferroic Bi1-xDyxFeO3 (BDFO) deposited on ZnO at the macroscopic level has been demonstrated in this paper. Magnetic properties are observed by saturated magnetic and ferroelectric hysteresis loops…
Zinc nitride films were synthesized by reactive radio frequency (rf) magnetron sputtering of a zinc target using an Ar+N2 mixture. The as-deposited films were annealed in the air and O2 at 300 {\deg}C for 1 hr. The XRD measurements…
We systematically investigated the temperature behaviors of the electrical conductivity and Hall coefficient of two series of amorphous indium gallium zinc oxides (a-IGZO) films prepared by rf sputtering method. The two series of films are…
The authors have shown that nanogranular indium tin oxide (ITO) films, deposited by spray pyrolysis on silicon substrate, demonstrate ultralow thermal conductivity ~ 0.84 +/-0.12 Wm-1K-1 at room temperature. This value is approximately by…
The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3 at room temperature are observed. Activated behaviour is…
Metal oxide thin films are of great interest in scientific advancement, particularly semiconductor thin films in transistors and in a wide range of optoelectronic applications. Many metal oxide thin films attract interest for their…
Cr-doped ZnO films were fabricated by a new but feasible method, that is, annealing Cr-Zn layers deposited via DC magnetron sputtering in air. Microstructures of the films were investigated using X-ray diffraction, scanning electron…
The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron…
Optical properties of refractory intermetallic thin films of Au$_{3}$Zr were experimentally investigated for the first time, which show distinctive plasmonic properties in the visible and near infrared region. The films were fabricated…
Thin p-type Sb-doped ZnO films were grown by filtered vacuum arc deposition (FVAD), on untreated glass samples. The arc cathode was prepared by dissolving Sb into molten Zn. The deposition was performed with 200 A arc current, running for…
Possibilities of turning intrinsically n-type oxide semiconductors like ZnO and Zn$_{1-x}$Mg$_x$O into p-type materials are investigated. Motivated by recent experiments on Zn$_{1-x}$Mg$_x$O doped with nitrogen we analyze the electronic…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…
We report the growth, characterization and superconducting properties of a new amorphous superconductor, RexZr ( x ~ 6 ), in thin film form. Films were grown by pulsed laser deposition with the substrate kept at room temperature. Films with…