Related papers: Quantum Anomalous Layer Hall Effect in the Topolog…
The interaction between strong correlation and Berry curvature is an open territory of in the field of quantum materials. Here we report large anomalous Hall conductivity in a Kondo lattice ferromagnet USbTe which is dominated by intrinsic…
The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and…
Quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) is a novel transport phenomenon in which the Hall resistance reaches the quantum plateau in the absence of external magnetic field. Recently, this exotic effect has…
The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K…
The nonlinear Hall effect (NLHE) connects crystalline symmetry to quantum geometry, offering a probe of band topology beyond linear transport. While most studies have focused on the Berry curvature dipole in low-symmetry crystals,…
Mn$_{3}$X (X= Sn, Ge) are noncollinear antiferromagnets hosting a large anomalous Hall effect (AHE). Weyl nodes in the electronic dispersions are believed to cause this AHE, but their locus in the momentum space is yet to be pinned down. We…
The intrinsic anomalous Hall effect in metallic ferromagnets is shown to be controlled by Berry phases accumulated by adiabatic motion of quasiparticles on the Fermi surface, and is purely a Fermi-liquid property, not a ``bulk'' Fermi sea…
The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron…
Recent experiments on the twisted semiconductor bilayer system $t$MoTe$_2$ have observed integer and fractional quantum anomalous Hall effects, which occur in topological moir\'e bands at zero magnetic field. Here, we present a global phase…
The origin of anomalous Hall effect (AHE) in magnetic materials is one of the most intriguing aspect in condensed matter physics and has been controversial for a long time. Recent studies indicate that the intrinsic AHE is closely related…
The interactions between conduction electrons and magnetism can significantly enhance the Hall signal, a phenomenon known as the anomalous Hall effect (AHE). While the AHE is generally not expected in antiferromagnets, a large AHE is…
The search of new topological insulators that demonstrate the quantum anomalous Hall effect (QAHE) is a cutting-edge research topic in condensed matter physics and materials science. So far, the QAHE has been observed only in Cr-doped…
In this work, we propose an intrinsic mechanism to understand the even-odd effect, namely the opposite signs of the anomalous Hall resistance and the different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown…
The anomalous Hall effect (AHE), which provides a bridgeway between the geometry of quantum wavefunctions and transport measurements, has been a key focus of intensive studies. In addition to the well-studied linear AHE, governed by the…
The nonlinear Hall effect (NLHE), as an important probe to reveal the symmetry breaking in topological properties of materials, opens up a new dimension for exploring the energy band structure and electron transport mechanism of quantum…
The planar Hall effect (PHE) is the appearance of an in-plane transverse voltage in the presence of coplanar electric and magnetic fields. Its hallmark is a characteristic $\pi$-periodic, i.e. even under a magnetic field reversal, angular…
Electrons in topological flat bands can form novel topological states driven by the correlation effects. The penta-layer rhombohedral graphene/hBN moire superlattice has been shown to host fractional quantum anomalous Hall effect (FQAHE) at…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
Transport measurements on thin films of the prototypical altermagnet MnTe have reported conflicting phenomena of anomalous Hall effects (AHE), including opposite signs and thickness-independent resistivity. Here we resolve these…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…