Related papers: Modeling Defect-Level Switching for Highly-Nonline…
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible…
This paper introduces a novel simulation tool for analyzing and training neural network models tailored for compute-in-memory hardware. The tool leverages physics-based device models to enable the design of neural network models and their…
Memristive devices represent a promising technology for building neuromorphic electronic systems. In addition to their compactness and non-volatility features, they are characterized by computationally relevant physical properties, such as…
We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3 active…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
Inverse design of nanoparticles for desired scattering spectra and dynamic switching between the two opposite scattering anomalies, i.e. superscattering and invisibility, is important in realizing cloaking, sensing and functional devices.…
Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…
We investigate discrete-time conewise linear systems (CLS) for which all the solutions exhibit a finite number of switches. By switches, we mean transitions of a solution from one cone to another. Our interest in this class of CLS comes…
In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their…
In current generation digital phase locked loop (DPLL) architectures, techniques like adaptive loop bandwidth with loop order switching and switched phase-detection are employed to achieve better lock time and jitter performance. This work…
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states.…
For microprocessors used in real-time embedded systems, minimizing power consumption is difficult due to the timing constraints. Dynamic voltage scaling (DVS) has been incorporated into modern microprocessors as a promising technique for…
It is generally impossible to separately measure the resistance of the functional component (i.e., the intrinsic device materials) and the parasitic component (i.e., terminals, interfaces and serial loads) in a two-terminal device. Yet such…
On-device machine learning (ODML) enables intelligent applications on resource-constrained devices. However, power consumption poses a major challenge, forcing a trade-off between model accuracy and power efficiency that often limits model…
The goal of this thesis is to gain new insights into the drift phenomenon and identify strategies to mitigate it. An extensive experimental characterization of PCM devices and in particular drift forms the foundation of each chapter. With…
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…
The control properties of discrete-time switched linear systems (SLS) with switching signals generated by logical dynamic systems are studied using the semi-tensor product (STP) approach. With the algebraic state space representation…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
Memristor device modeling is currently a heavily researched topic and is becoming ever more important as memristor devices make their way into CMOS circuit designs, necessitating accurate and efficient memristor circuit simulations. In this…