Related papers: Gate-Tunable Spin-Orbit Coupling in a Germanium Ho…
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map…
We study the implications of spin-orbit interaction (SOI) for two-qubit gates (TQGs) in semiconductor spin qubit platforms. SOI renders the exchange interaction governing qubit pairs anisotropic, posing a serious challenge for conventional…
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit…
Flopping mode qubits in double quantum dots (DQDs) allow for coherent spin-photon hybridization and fast qubit gates when coupled to either an alternating external or a quantized cavity electric field. To achieve this, however, electronic…
Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction…
We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multi-electron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood…
Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in Germanium hut wires. By tuning the growth…
We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance,…
We present a design and modeling of a scalable quantum processor architecture utilizing hole-spin qubits defined in gate-controlled germanium (Ge) quantum dots, where coherent spin-phonon coupling is predicted to facilitate qubit…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of…
Hole spin qubits hosted in Germanium quantum dots are promising candidates for scalable quantum computing. The strong spin-orbit interaction can enable fast and all-electrical quantum control. Furthermore, the platform can implement…
Spin qubits in semiconductor quantum dots offer a gate-tunable platform for quantum information processing. While two-qubit interactions are typically realized through exchange coupling between neighboring spins, coupling spin qubits to…
The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…
Quantum information transfer is fundamental for scalable quantum computing in any potential platform and architecture. Hole spin qubits, owing to their intrinsic spin-orbit interaction (SOI), promise fast quantum operations which are…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
Hole spin qubits in planar Ge heterostructures are one of the frontrunner platforms for scalable quantum computers. In these systems, the spin-orbit interactions permit efficient all-electric qubit control. We propose a minimal design…
We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the…