Related papers: Transient spin injection efficiencies at ferromagn…
We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due…
The injection of spin currents in semiconductors is one of the big challenges of spintronics. Motivated by the ultrafast demagnetisation and spin injection into metals, we propose an alternative femtosecond route based on the laser…
Ultrashort spin current pulses have a great potential of becoming the carriers of information in future ultrafast spintronics. They present the outstanding property of an extremely compressed time profile, which can allow for the building…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
Recent developments of the sources of intense and ultrashort X-ray pulses stimulate theoretical studies of phenomena occurring on ultrafast timescales. In the present study, spin-flip dynamics in transition metal complexes triggered by…
There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable…
The spin-dependence of the interface resistance between ferromagnetic Fe and InAs is calculated from first-principles for specular and disordered (001) interfaces. Because of the symmetry mismatch in the minority-spin channel, the specular…
Understanding how a spin current flows across metal-semiconductor interfaces at pico- and femtosecond timescales has implications for ultrafast spintronics, data processing and storage applications. However, the possibility to directly…
Spin transmission at ferromagnet/heavy metal interfaces is of vital importance for many spintronic devices. Usually the spin current transmission is limited by the spin mixing conductance and loss mechanisms such as spin memory loss. In…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or…
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs…
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of…
Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors…
We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…
We report a real-time first-principles study of ultrafast spin injection in a WSe$_2$-graphene heterobilayer under circularly polarized laser irradiation, using time-dependent density functional theory. Contrary to conventional…
The effect of the interface roughness on the spin injection from a ferromagnet into a semiconductor is studied theoretically. Even a small interface irregularity can lead to a significant enhancement of the injection efficiency. When a…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…