Related papers: Electrical evolution of W and WC Schottky contacts…

In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I-V) analysis in forward bias, performed on a set of equivalent diodes, showed a symmetric…

Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/compositional properties of the WC/AlGaN contact has been…

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV,…

The forward and reverse current-voltage characteristics of the Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. It is found that Shottky barrier height increases and time ideality…

Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for…

600V/20A 4H-SiC Schottky barrier diodes (SBD) were fabricated to investigate the effect of key processing steps, especially before and after a formation of Schottky contact, on the electrical performances of SBD and on a long-term…

Schottky barrier contact has been fabricated by thermal deposition of Al on (100) Ge (impurity concentration~1010/cm3 at 80K) that shows extrinsic p-type to intrinsic n-type transition near 180K. Both p and n-type Ge exhibits ideal Schottky…

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…

Schottky barrier height and the ideality factor $\eta$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading…

The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using BEEM over a period of 21 days to observe changes in the interface electrostatics. Initially the average spectrum is fit to a Schottky barrier height of 0.71 eV…

Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at room temperature. Electrical performance and degradation…

Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe$_2$ and 2H-NbSe$_2$, harbor a second order charge density wave (CDW) transition where phonons play a key role for the periodic modulations of conduction electron…

A comprehensive current-voltage (I-V) characterization is performed for three different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID) \{beta}-(Al0.19Ga0.81)2O3 grown by molecular beam epitaxy (MBE) on \{beta}-Ga2O3 for…

Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of…

Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical…

We use scanning tunneling microscopy to study the temperature evolution of the atomic-scale properties of the nearly-commensurate charge density wave (NC-CDW) state of the low-dimensional material, 1T-TaS$_2$. Our measurements at 203 K, 300…

Direct observation of temperature dependence of individual bands of semiconductors for a wide temperature region is not straightforward, in particular. However, this fundamental property is a prerequisite in understanding the…

In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy…

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the…

Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…