Related papers: Scale-dependent optimized homoepitaxy of InAs(111)…
Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van…
In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire (NW) core-shell structures. In particular, we study the…
We propose a variational framework for accretive surface growth driven by an optimality principle. Rather than prescribing a kinetic law, the configuration at each time step is obtained, within a time-discrete setting, as the solution of a…
Electromagnetic metasurfaces offer the capability to realize almost arbitrary power conserving field transformations. These field transformations are governed by the generalized sheet transition conditions, which relate the tangential…
Lithium niobate is a multi-functional material with wide reaching applications in acoustics, optics, and electronics. Commercial applications for lithium niobate require high crystalline quality currently limited to bulk and ion sliced…
Pb(Mg1/3Nb2/3)O3-PbTiO3 solid solution (PMN(1-x)-PTx) ceramics with 0 <x<1 have been prepared by homo-epitaxial templated grain growth (HTGG) using cubic PMN-PT single crystal seeds as templates and nanoparticles for thes ceramic matrix.…
Infrared spectroscopy currently requires the use of bulky, expensive, and/or fragile spectrometers. For gas sensing, environmental monitoring, or other applications in the field, an inexpensive, compact, robust on-chip spectrometer is…
The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space…
Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for…
We report on the gold assisted epitaxial growth of Ge nanostructures under ultra high vacuum (UHV) conditions (\approx3\times 10-10 mbar) on clean Ge (100) surfaces. For this study, \approx2.0 nm thick Au samples were grown on the substrate…
The recent identification of $\alpha$-MnTe as a candidate altermagnet has attracted considerable interest, particularly for its potential application in magnetic random-access memory. However, the development of high-quality thin films -…
The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species are mobile, and attractive interactions among adatoms and…
The functional properties of devices based on perovskite oxides depend strongly on the growth modes that dramatically affect surface morphology and microstructure of the hetero-structured thin films. To achieve atomically flat surface…
Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic…
Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was…
Materials informatics exploiting machine learning techniques, e.g., Bayesian optimization (BO), has the potential to offer high-throughput optimization of thin-film growth conditions through incremental updates of machine learning models in…
The altermagnetic materials have emerged as model systems for studying spin split electronic structures, yet controlled epitaxial growth on technologically relevant substrates remains challenging. Among the known candidates, MnTe stands out…
We demonstrate optimization of optical metasurfaces over $10^5$--$10^6$ degrees of freedom in two and three dimensions, 100--1000+ wavelengths ($\lambda$) in diameter, with 100+ parameters per $\lambda^2$. In particular, we show how…
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good…
The paper presents results from kinetic Monte Carlo simulations of kinetic surface roughening using an important and experimentally relevant model of epitaxial growth -- the solid-on-solid model with Arrhenius dynamics. A restriction on…