Related papers: A Wide Dynamic Range Read-out System For Resistive…
Readout noise is a critical parameter for characterizing the performance of charge-coupled devices (CCDs), which can be greatly reduced by the correlated double sampling (CDS) circuit. However, conventional CDS circuit inevitably introduces…
A new readout technique was developed with the primary aim of keeping the number of channels in the front-end electronics as low as possible when scaling up the sensitive area of a Resistive Plate Chamber (RPC). The readout method here…
Emerging nano-scale programmable Resistive-RAM (RRAM) has been identified as a promising technology for implementing brain-inspired computing hardware. Several neural network architectures, that essentially involve computation of scalar…
A wideband phase comparator for precise measurements of phase difference of high current shunts has been developed at INRIM. The two-input digital phase detector is realized with a precision wideband digitizer connected through a pair of…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Recent breakthroughs in associative memories suggest that silicon memories are coming closer to human memories, especially for memristive Content Addressable Memories (CAMs) which are capable to read and write in analog values. However, the…
An instrumentation amplifier (InAmp) is an electronic device used in many applications, where test and measuring accuracy is required. However, one of the drawbacks of an InAmp is limited operation gain range. In this paper, we investigate…
Memristors, which are characterized by their unique input-voltage-history-dependent resistance, have garnered significant attention for the exploration of next-generation in-memory computing, reconfigurable logic circuits, and neural…
We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain…
Recording reliably extracellular neural activities isan essential prerequisite for the development of bioelectronicsand neuroprosthetic applications. Recently, a fully differential,2-stage, integrating pre-amplifier was proposed for…
The two high-angle Time Projection Chambers of the T2K experiment are equipped with a new readout system based on resistive Micromegas detector technology, and utilize custom-made electronics based on AFTER chips for signal processing. This…
Memristors, initially introduced in the 1970s, have received increased attention upon successful synthesis in 2008. Considerable work has been done on modeling and applications in specific areas, however, very little is known on the…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the…
Reasoned by its dynamical behavior, the memristor enables a lot of new applications in analog circuit design. Since some realizations are shown (e.g. 2007 by Hewlett Packard), the development of applications with memristors becomes more and…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
Transition-edge sensor (TES) is a highly sensitive device that is capable of detecting extremely low levels of energy. It is characterised by low noise performance and high energy resolution. A mature method for reading out TES signal is…