Related papers: Thinned Germanium Substrates for III-V Multijuncti…
Solar cells manufactured on top of Ge substrates suffer from inherent drawbacks that hinder or limit their potential. The most deleterious ones are heavy weight, high bulk recombination, lack of photon confinement and an increase of the…
Virtual substrates based on thin Ge layers on Si by direct deposition have achieved high quality recently. Their application to high efficiency III-V solar cells is analyzed in this work. Replacing traditional Ge substrates with Ge/Si…
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical…
This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated.…
A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with…
In spite of having higher carrier mobilities and absorption coefficients of germanium (Ge) than those of silicon (Si), there has been less focus on Ge-based solar cells due to the low bandgap and high-cost of Ge wafer as well as requirement…
To date, high efficiency multijunction solar cells have been developed on Ge or GaAs substrates for space applications, and terrestrial applications are hampered by high fabrication costs. In order to reduce this cost, we propose a…
Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below…
Thin-film solar cells that are considered as the second generation of solar cells are known for their low cost and acceptable efficiency. In this technology, semiconductor layers with a thickness of micrometer are deposited on thick enough…
The advanced multijunction solar cell (MJSC) has emerged as a frontrunner in photovoltaic literature due to its superior photoconversion efficiency (PCE) owing to its complex fabrication procedure and high costs. This article aims to…
The growth of heavily doped tunnel junctions in inverted metamorphic multijunction solar cells induces a strong diffusion of Zn via a point-defects-assisted mechanism. The redistribution of Zn can compensate the n-type doping in the emitter…
In this study, we designed and optimized the performance of pin junction GaAs/AlGaAs heterojunction nanowire solar cell arrays. It is done by performing coupled optoelectronic simulations to find the optimal doping for the GaAs core and…
Following letter introduces a theoretical approach to investigate the effect of two-step GaN barrier layer growth methodology on the performance of InGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grown on top of…
Reverse biasing triple-junction GaInP/Ga(In)As/Ge solar cells may affect their performance by the formation of permanent shunts even if the reverse breakdown voltage is not reached. In previous works, it was observed that, amid the three…
A design tool was formulated for optimizing the efficiency of inorganic, thin-film, photovoltaic solar cells. The solar cell can have multiple semiconductor layers in addition to antireflection coatings, passivation layers, and buffer…
Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer…
In this paper we study CdS/CdTe solar cells by means of AMPS-1D software. First we study the effect of thickness of semiconductor layers on the output parameters of the CdS/CdTe solar cell, such as density of short-circuit current, open…
Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the…
This study investigates a four-terminal mechanically stacked double junction photovoltaic device based on GaAs as a top subcell and Si as a bottom subcell. Unlike two terminal monolithically series connected double junction photovoltaics,…
Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits. This paper presents ideal limiting efficiencies for tandem and triple junction multijunction solar cells subject only to the constraint of the…