Related papers: Identifying diverging-effective mass in MOSFET and…
In order to explain the metal-Mott-insulator transition, the Brinkman-Rice (BR) picture is extended. In the case of less than one as well as one electron per atom, the on-site Coulomb repulsion is given by U={kappa}{rho}^2U_c by averaging…
We study the renormalization of the Fermi-liquid parameters in the vicinity of a density wave quantum phase transition, which should occur in MOSFET systems at low densities. First, using a perturbative RPA treatment of fluctuations, we…
In order to clarify the high-$T_c$ mechanism in inhomogeneous cuprate layer superconductors, we deduce and find the correlation strength not revealed before, contributing to the formation of the Cooper pair and the 2-D density of state, and…
In order to calculate the effective mass of quasiparticles for a strongly correlated metallic system in which the number of carriers, n, is less than that of atoms (or lattices), l, the metallic system is averaged by one effective charge…
This is a full-paper of the paper(Physica C341-348, 259(2000)) published previously. The effective charge and the Coulomb energy are justified by means of measurement. Theoretical calculations of the effective mass depending on band filling…
We show that the quasiparticle effective mass $M^*$ diverges as a function of the system's density $x$, $M^*\propto 1/(x-x_{FC})$, when a system approaches the critical point $x_{FC}$ at which the fermion condensation quantum phase…
Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…
The effective mass of the quasiparticle excitations in quasi two-dimensional systems is calculated analytically. It is shown that the effective mass increases sharply when the density approaches the critical one of metal-insulator…
This is a numerical study of quasiparticle localization in symmetry class \textit{BD} (realized, for example, in chiral \textit{p}-wave superconductors), by means of a staggered-fermion lattice model for two-dimensional Dirac fermions with…
The knowledge of effective masses is a key ingredient to analyze numerous properties of semiconductors, like carrier mobilities, (magneto-)transport properties, or band extrema characteristics yielding carrier densities and density of…
Bose-Fermi mixtures naturally appear in various physical systems. In semiconductor heterostructures, such mixtures can be realized, with bosons as excitons and fermions as dopant charges. However, the complexity of these hybrid systems…
The physics of the Mott metal-insulator transition (MIT) has attracted huge interest in the last decades. However, despite broad efforts, some key theoretical predictions are still lacking experimental confirmation. In particular, it is not…
We study the strong correlation effects in the vicinity of the Mott metal-insulator transition using coupled clean or disordered Hubbard chains with a infinitely large coordinate number $D_{\perp}\to\infty$ in the direction perpendicular to…
Bound electron pairs formed due to the peculiarities of the band dispersion of electrons in crystals attract much interest because they can carry charge and spin even in the absence of band conductivity. However, such an important parameter…
The ultrafast response of the prototype Mott-Hubbard system (V1-xCrx)2O3 was systematically studied with fs pump-probe reflectivity, allowing us to clearly identify the effects of the metal-insulator transition on the transient response.…
The Mott transition is usually considered as resulting from the divergence of the effective mass of the quasiparticle in the Fermi-liquid theory; the dispersion relation around the Fermi level is considered to become flat towards the Mott…
Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth $\Delta$ to the Hubbard repulsion…
Interfaces in materials are often treated as massless geometric boundaries, and many kinetic models adopt an overdamped assumption. In this Letter, we show that grain boundaries exhibit inertial behavior under high-frequency oscillatory…
We investigate the effect of mass imbalance in binary Fermi mixtures loaded in optical lattices. Using dynamical mean-field theory, we study the transition from a fluid to a Mott insulator driven by the repulsive interactions. For almost…
Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states.…