Related papers: Strain driven conducting domain walls in a Mott in…

Recent reports of current-induced switching of ferrimagnetic oxides coupled to a heavy metal layer have opened realistic prospects for implementing magnetic insulators into electrically addressable spintronic devices. However, key aspects…

We show how the two-dimensional (2D) topological insulator evolves, by stacking, into a strong or weak topological insulator with different topological indices, proposing a new conjecture that goes beyond an intuitive picture of the…

Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with…

We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM…

Ferroelectric domain walls (DWs) are nanoscale topological defects that can be easily tailored to create nanoscale devices. Their excitations, recently discovered to be responsible for DW GHz conductivity, hold promise for faster signal…

We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the…

A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls…

The high-mobility 2DEGs formed at the interfaces between certain insulating perovskite oxides have been known to be a novel playground of exotic physical orders like, superconductivity and ferromagnetism and their inter-coupling. There have…

Domain walls separating regions of AB and BA interlayer stacking in bilayer graphene have attracted attention as novel examples of structural solitons, topological electronic boundaries, and nanoscale plasmonic scatterers. We show that…

Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…

Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…

Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…

Local conduction at domains and domains walls is investigated in BiFeO3 thin films containing mostly 71o domain walls. Measurements at room temperature reveal conduction through 71o domain walls. Conduction through domains could also be…

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…

We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…

The spatial variation of electronic states was imaged in the lightly doped Mott insulator Ca_{2-x}Na_{x}CuO_{2}Cl_{2} using scanning tunneling microscopy / spectroscopy (STM/STS). We observed nano-scale domains with a high local density of…

Domain walls in correlated charge density wave compounds such as 1T-TaS2 can have distinct localized states which govern physical properties and functionalities of emerging quantum phases. However, detailed atomic and electronic structures…

Ferroelectric nitrides have emerged as promising semiconductor materials for modern electronics. However, their domain structures and associated properties are basically unknown, despite their potential to result in optimized or new…

We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectric film using Wentzel-Kramers-Brillouin approximation. Both…

Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator -- Change in chemical potential can induce a transition from a metal to a band insulator; strong…