Related papers: How much gallium do we need for a p-type Cu(In,Ga)…

Large high-quality single crystals of hole-doped iron-based superconductor (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ were grown over a broad composition range $0.22 \leq x \leq 1$ by inverted temperature gradient method. We found that high soaking…

We measure and analyze the resistivity of $Bi_2Sr_2CaCu_2O_{8+\delta}$ crystals for different doping $\delta$. We obtain the fraction of carrier $\eta(T,\delta) = n_g/n_{TOT}$ that do not participate to the c-axis conductivity. All the…

The optical conductivity of CuO2 (copper-oxygen) planes in p- and n-type cuprates thin films at various doping levels is deduced from highly accurate reflectivity data. The temperature dependence of the real part sigma1(omega) of this…

Five transport coefficients of the cuprate superconductor Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+\delta}$ were measured in the normal state down to low temperature, reached by applying a magnetic field (up to 66T) large enough to suppress…

We carried out a comparative study of the in-plane resistivity and optical spectrum of doped BaFe2As2 and investigated the doping evolution of the charge dynamics. For BaFe2As2, charge dynamics is incoherent at high temperatures. Electron…

Copper-based chalcopyrite semiconductors have attracted sustained interest owing to their promising thermoelectric (TE) performance, yet the microscopic origins of their TE behavior remain incompletely understood. Here, we systematically…

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in-situ during epitaxy. From the electronic valence…

Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict…

We present low-temperature thermal conductivity measurements on the cuprate Tl_2Ba_2CuO_{6+delta} throughout the overdoped regime. In the T -> 0 limit, the thermal conductivity due to d-wave nodal quasiparticles provides a bulk measurement…

The effects of planar hole concentration, p, on the resistivity, r(T), of sintered Y1-xCaxBa2(Cu1-yZny)3O7-d samples were investigated over a wide range of Ca, Zn, and oxygen contents. Zn was used to suppress superconductivity and this…

Solution growth of single crystals of the recently reported new compound Ce2PdIn8 was investigated. When growing from a stoichiometry in a range 2:1:20 - 2:1:35, single crystals of CeIn3 covered by a thin (~50 um) single-crystalline layer…

N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…

Sr2IrO4 was predicted to be a high temperature superconductor upon electron doping since it highly resembles the cuprates in crystal structure, electronic structure and magnetic coupling constants. Here we report a scanning tunneling…

Resistivity, Hall effect and magnetoresistance have been investigated systematically on single crystals of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ ranging from undoped to optimally doped regions. A systematic evolution of the quasiparticle scattering…

Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic…

EuCd_{2}As_{2} has attracted considerable interest as one of the few magnetic Weyl semimetal candidate materials, although recently there have been emerging reports that claim it to have a semiconducting electronic structure. To resolve…

Scanning tunneling spectroscopic studies of $Ba(Fe_{1-x}Co_x)_2As_2$ (x = 0.06, 0.12) single crystals reveal direct evidence for predominantly two-gap superconductivity. These gaps decrease with increasing temperature and vanish above the…

The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about s = 286…

The power factor of pure p-type ZnSb has been calculated via ab initio simulations assuming that the carrier concentrations are due to the doping effect of intrinsic zinc vacancies. With a vacancy concentration close to the experimental…

Temperature and doping dependent tunneling spectroscopy on $Bi_2Sr_2CaCu_2O_{8+\delta}$ single crystals has been investigated by using break-junction technique. The results provide direct evidence that the pseudogap persists into heavily…