Related papers: Graphene on Silicon Hybrid Field-Effect Transistor…
The interaction between graphene and substrates provides a viable routes to enhance functionality of both materials. Depending on the nature of electronic interaction at the interface, the electron band structure of graphene is strongly…
Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for…
The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…
The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer.…
The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional…
Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits…
We experimentally investigate electrical transport properties of graphene, which is a two dimensional (2D) conductor with relativistic energy dispersion relation. By investigating single- and bi-layer graphene devices with different aspect…
Graphene on silicon carbide (SiC) bears great potential for future graphene electronic applications because it is available on the wafer-scale and its properties can be custom-tailored by inserting various atoms into the graphene/SiC…
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…
The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from…
The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by…
Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in…
Feedback-controlled electric breakdown of graphene in air or vacuum is a well-established way of fabricating tunnel junctions, nanogaps, and quantum dots. We show that the method is equally applicable to encapsulated graphene constrictions…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…
We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional…
Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of…
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore…
The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…
We propose a general theory for the analytical description of versatile hysteretic phenomena in a graphene field effect transistor (GFET) allowing for the existence of the external dipoles on graphene free surface and the localized states…