Related papers: Orbital memory from individual Fe atoms on black p…
The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of…
Coherent optical memories will likely play an important role in future quantum communication networks. Among the different platforms, memories based on ladder-type orbital transitions in atomic gasses offer high bandwidth ($>100$ MHz),…
The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a…
We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically-induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase,…
Scalability presents a central platform challenge for the components of current quantum network implementations that can be addressed by microfabrication techniques. We demonstrate a high-bandwidth optical memory using a warm alkali atom…
We study the effects of phonons on the tunneling of an atom between two surfaces. In contrast to an atom tunneling in the bulk, the phonons couple very strongly, and qualitatively change the tunneling behavior. This is the first example of…
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
The realization of quantum memory using warm atomic vapor cells is appealing because of their commercial availability and the perceived reduction in experimental complexity. In spite of the ambiguous results reported in the literature, we…
In this work, we study a biquadratic Heisenberg model with coupled orbital degree of freedom using Monte Carlo simulation in order to investigate the phase transitions in iron-based superconductors. The antiferro-quadrupolar state, which…
We propose a quantum memory scheme to transfer and store the quantum state of a superconducting flux qubit (FQ) into the electron spin of a single nitrogen-vacancy (NV) center in diamond via yttrium iron garnet (YIG), a ferromagnet. Unlike…
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory'…
We outline a general mechanism for Orbital-selective Mott transition (OSMT), the coexistence of both itinerant and localized conduction electrons, and show how it can take place in a wide range of realistic situations, even for bands of…
We developed a method to detect the quantum nature of high spin molecules using muon spin rotation, and a three-step field cycle ending always with the same field. We use this method to demonstrate that the Fe8 molecule can remember 6…
Recent advances in optics have shown that solitons have a great potential for upgrading the future optical systems which demand fast and reliable data transfer. Along side Different architectures have evolved to realize an optical computer.…
We study a one-dimensional chain of identical atoms with two electronic orbitals and two electrons per atom, subject to an external oscillating pressure that periodically modulates the lattice spacing. This leads to time-dependent intra-…
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows…
The $\alpha$-$T_3$ system undergoes a topological phase transition(TPT) between two distinct quantum spin-Hall phases across $\alpha=0.5$ when the spin-orbit interaction of Kane-Mele type is taken into consideration. As a hallmark of such a…
We describe our implementation of an extremely detailed model atom of singly ionized iron for NLTE computations in static and moving astrophysical plasmas. Our model atom includes 617 levels, 13675 primary permitted transitions and up to…
Anisotropic open shell 4f ions have magnetic moments that can be read and written as atomic bits. If it comes to qbits where the phase of the wave function has to be written, controlled and read, it is of advantage to rely on more than one…