Related papers: Orbital memory from individual Fe atoms on black p…
A quantum memory is an essential element for quantum computation, quantum network and quantum metrology. Previously, a single-qubit quantum memory with a coherence time of about an hour has been realized in a dual-species setup where a…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
Spin and orbital angular momenta are two intrinsic properties of an electron and are responsible for the physics of a solid. How the spin and orbital evolve with respect to each other on several hundred femtoseconds is largely unknown, but…
Trapped ions boast long coherence times and excellent gate fidelities, making them a useful platform for quantum information processing. Scaling to larger numbers of ion qubits in RF Paul traps demands great effort. Another technique for…
Thin molecular films under model conditions are often exploited as benchmarks and case studies to investigate the electronic and structural changes occurring on the surface of metallic electrodes. Here we show that the modification of a…
Iron telluride (FeTe), a relative of the iron based high temperature superconductors, displays unusual magnetic order and structural transitions. Here we explore the idea that strong correlations may play an important role in these…
We propose a quantum memory based on the pre-created long-lived macroscopic quantum coherence. It is shown that the proposed approach provides new physical properties and methods for retrieval of the signal light fields and improvement of…
Storage of quantum information encoded into true single photons is an essential constituent of long-distance quantum communication based on quantum repeaters and of optical quantum information processing. The storage of photonic…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
The present work describes the theoretical analysis of isotope effect coefficient as a function of transition temperature in two orbital per site model Hamiltonian in iron based superconducting system. The expression of isotope effect…
Processing-in-memory (PIM) reduces data transfer latency by rolling memory and logic elements into one compute location. As an emergent material candidate for such an architecture, we propose a strained Weyl semimetal based…
The highest-density magnetic storage media will code data in single-atom bits. To date, the smallest individually addressable bistable magnetic bits on surfaces consist of 5-12 atoms. Long magnetic relaxation times were demonstrated in…
Memory is a foundational concept across disciplines, from neurobiology and electronics to artificial intelligence and quantum gravity. In materials, memory effects typically arise from ferroic orders, such as ferroelectricity and…
We developed a machine learning interatomic potential (MLIP) for Ge-rich GeSbTe alloys of interest for applications in phase change memories embedded in microcontrollers. The MLIP was generated by fitting with a neural network method a…
In this study, we have studied the quantum tunneling of a single spin-orbit-coupled atom held in a periodically modulated optical lattice with an impurity. At the pseudocollapse points of quasienergy bands, where the dynamical localization…
We propose a quantum memory protocol based on dynamically changing the resonance frequency of an ensemble of two-level atoms. By sweeping the atomic frequency in an adiabatic fashion, photons are reversibly transferred into atomic…
Light pulses offer a faster, more energy-efficient, and direct route to magnetic bit writing, pointing toward a hybrid memory and computing paradigm based on photon transmission and spin retention. Yet progress remains hindered, as…
A new protocol of the optical quantum memory based on the resonant interactions of the multi atomic system with a cavity light mode is proposed. The quantum memory is realized using a controllable inversion of the inhomogeneous broadening…
Quantum memory is a crucial component of a quantum information processor, just like a classical memory is a necessary ingredient of a conventional computer. Moreover, quantum memory of light would serve as a quantum repeater needed for…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…