Related papers: SOI-based micro-mechanical terahertz detector oper…

Dynamic polarization control of light is essential for numerous applications ranging from enhanced imaging to materials characterization and identification. We present a reconfigurable terahertz metasurface quarter-waveplate consisting of…

We report recent progress towards the realization of a sub-mK, low-vibration environment at the bottom stage of a dry dilution refrigerator for use in mechanical tests of quantum mechanics. Using adiabatic nuclear demagnetization, we have…

Terahertz imaging holds great potential for non-destructive material inspection, but practical implementation has been limited by resolution constraints. In this study, we present a single-pixel THz imaging system based on a confocal…

Sensitive detection of terahertz (THz) radiation is fundamental to progress in spectroscopy, advanced wireless communication, and the realization of emerging quantum technologies. However, the intrinsically low photon energies in the THz…

Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a…

Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…

We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The…

Terahertz (THz) technology shows great potential in 6G communications and imaging, but faces challenges related to detector sensitivity, noise, and cryogenic operation. Here, we integrate interferometric enhancement of absorption (IEA) from…

A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event…

Different terrestrial terahertz applications would benefit from large-format arrays, operating in compact and inexpensive cryocoolers at liquid helium temperature with sensitivity, limited by the 300-K background radiation only. A…

We report on the design, fabrication, and implementation of ultrasensitive micromechanical oscillators. Our ultrathin single-crystal silicon cantilevers with integrated magnetic structures are the first of their kind: They are fabricated…

We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…

We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made…

Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range…

Because of the ultrafast and photon-driven nature of the transport in their active region, we demonstrate that quantum cascade lasers can be operated as resonantly amplified terahertz detectors. Tunable responsivities up to 50 V/W and noise…

Terahertz (THz) technology is rapidly evolving, and the advancement of data and information processing devices is essential. Silicon THz microresonators provide perfect platforms to develop compact and integrated devices that could…

We present a metamaterial-based terahertz (THz) sensor for thickness measurements of subwavelength-thin materials and refractometry of liquids and liquid mixtures. The sensor operates in reflection geometry and exploits the frequency shift…

We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two…

This paper introduces a thermal infrared detector utilizing a nano-optomechanical silicon nitride (SiN) resonator, equipped with a free-space impedance-matched (FSIM) absorber composed of a platinum (Pt) thin film, offering a broadband…

A sensitive photoacoustic detection approach employing a silicon cantilever is investigated for power measurement of electromagnetic radiation. The technique which is actuated by pressure waves generated through radiation-induced heat,…