Related papers: Gallium Oxide Heterojunction Diodes for Improved H…
Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped…
We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature,…
In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSD) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3…
We demonstrate an Nb$_{2}$O$_{5}$/$\beta$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) hetero-junction diode with Nb$_{2}$O$_{5}$ as the high-k dielectric insulator for more efficient electric field management resulting in enhanced…
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics.…
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics…
This work presents electrothermal co-design of vertical \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) to enhance both heat dissipation and high field management in high-power applications. Here, we demonstrate device-level thermal management…
Non-crystalline thin-film Schottky diodes are cost-effective but often exhibit unreliable electrical characteristics due to material imperfections. In this work, I present a Schottky diode structure utilizing in-situ grown Ta2O5 and ZnO…
We report over 3 kV breakdown voltage and ultra-low leakage (011) \b{eta}-Ga2O3 power devices utilizing Schottky barrier engineering and high-permittivity (\k{appa}) dielectric (ZrO2) field plate. The (011) orientation of \b{eta}-Ga2O3…
Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been demonstrated to form high electron mobility transistor (HEMT)…
This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3 epitaxial layers. Both as-fabricated Cr2O3 and NiOx HJDs…
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanical exfoliation process, which is described in detail, is…
This work reports the demonstration of ALD-deposited NiO/\b{eta}-Ga2O3 heterojunction diodes (HJDs) on low doped drift layer and highly doped (001) & (100) n+ substrates with experimental observation of a parallel-plane junction electric…
Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity…
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $\beta$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can…
We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited high current densities exceeding 2 kA/cm2 at 10 V, with a…
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of…
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…
The development of high-performing sensing materials, able to detect ppb-trace concentrations of volatile organic compounds at low temperatures, is required for the development of next-generation miniaturized wireless sensors. Here, we…
We report on a new type of rectifier which is in full contact equilibrium and thus, if down-sized to the nanoscale, shows no drift even if exposed to elevated temperatures and/or extreme waiting times. This is in contrast to existing diodes…