Related papers: Gallium Oxide Heterojunction Diodes for Improved H…
GaN is a wide-bandgap semiconductor used in high-efficiency LEDs and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapour phase, and oxygen may be included at this stage. Oxidation represents…
This letter reports high performance beta-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with improved regrowth process. Highly scaled I shaped gate have been fabricated with degenerately doped (N++) source/drain contact regrown by ozone…
600V/20A 4H-SiC Schottky barrier diodes (SBD) were fabricated to investigate the effect of key processing steps, especially before and after a formation of Schottky contact, on the electrical performances of SBD and on a long-term…
The significance of the superconducting diode effect lies in its potential application as a fundamental component in the development of next-generation superconducting circuit technology. The stringent operating conditions at low…
WO3-x thinfilms featuring petal-like and lamella-like nanostructures are grown under controlled oxygen partial pressures using hot filament chemical vapor deposition. These synthesized WO3-x nanostructures exhibit monoclinic structure and…
High-temperature superconductivity (HTSC) remains one of the most challenging and fascinating mysteries in condensed matter physics. Recently, superconductivity with transition temperature exceeding liquid-nitrogen temperature is discovered…
We propose a low-temperature thermal rectifier consisting of a chain of three tunnel-coupled normal metal electrodes. We show that a large heat rectification is achievable if the thermal symmetry of the structure is broken and the central…
Thermoelectric properties of the system La$_2$NiO$_{4+\delta}$ have been studied ab initio. Large Seebeck coefficient values are predicted for the parent compound, and to some extent remain in the hole-doped metallic phase, accompanied of…
This paper projects the enhanced drive current of a n-type electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET…
We introduce a deep-recessed gate architecture in $\beta$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped…
We present an investigation into the role of anode grid pitch and excitation spectrum on the performance of high-power optoelectronic switches utilizing Fe-doped $\beta$-Ga$_2$O$3$. By systematically varying the anode grid pitch ($20-80\…
We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabricated on AlGaO/GaO heterostructures grown by ozone MBE on…
The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V…
Superconductivity is observed in a new nontoxic cuprate system Ga-Ba-Ca-Cu-O, with Tc = 82K for GaBa2Ca5Cu6O14+{\delta} (Ga-1256) and Tc = 116K probably for GaBa2Ca3Cu4O10+{\delta} (Ga-1234) or GaBa2Ca2Cu3O8+{\delta} (Ga-1223),…
Voltage doubler rectifiers are usually applied to systems with high voltage and low current requirement. An X band voltage doubler rectifier has been developed with 72% conversion efficiency. To the best of our knowledge, the obtained…
The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that…
Ga$_2$O$_3$ is a wide-bandgap material of interest for a wide variety of devices, many of these requiring heterostructures, for instance to achieve carrier confinement. A common method to create such heterostructures is to alloy with…
Schottky barrier height and the ideality factor $\eta$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading…
Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap…
We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding…