Related papers: STeP-CiM: Strain-enabled Ternary Precision Computa…
Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than voltage or current. This work presents a fully integrated…
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $\mu$m $\times$ 30…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Compute-in-memory (CIM) techniques are widely employed in energy-efficient artificial intelligent (AI) processors. They alleviate power and latency bottlenecks caused by extensive data movements between compute and storage units. To extend…
Compute-in-memory (CIM) accelerators for spiking neural networks (SNNs) are promising solutions to enable $\mu$s-level inference latency and ultra-low energy in edge vision applications. Yet, their current lack of flexibility at both the…
In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…
Computing-in-memory (CIM) has attracted significant attentions in recent years due to its massive parallelism and low power consumption. However, current CIM designs suffer from large area overhead of small CIM macros and bad programmablity…
Accurate grain orientation mapping is essential for understanding and optimizing the performance of polycrystalline materials, particularly in energy-related applications. Lithium nickel oxide (LiNiO$_{2}$) is a promising cathode material…
The performance of today's in-memory indexes is bottlenecked by the memory latency/bandwidth wall. Processing-in-memory (PIM) is an emerging approach that potentially mitigates this bottleneck, by enabling low-latency memory access whose…
The Discrete Fourier Transform (DFT) is essential for various applications ranging from signal processing to convolution and polynomial multiplication. The groundbreaking Fast Fourier Transform (FFT) algorithm reduces DFT time complexity…
We present numerical experiments for geophysics electromagnetic (EM) modeling based upon high-order edge elements and supervised $h+p$ refinement approaches on massively parallel computers. Our high-order $h+p$ refinement strategy is based…
The use of lower precision has emerged as a popular technique to optimize the compute and storage requirements of complex Deep Neural Networks (DNNs). In the quest for lower precision, recent studies have shown that ternary DNNs (which…
In this work, we propose SEE-MCAM, scalable and compact multi-bit CAM (MCAM) designs that utilize the three-terminal ferroelectric FET (FeFET) as the proxy. By exploiting the multi-level-cell characteristics of FeFETs, our proposed SEE-MCAM…
Combinatorial optimization problems (COPs) are crucial in many applications but are computationally demanding. Traditional Ising annealers address COPs by directly converting them into Ising models (known as direct-E transformation) and…
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data…
In this work, we propose a novel differential photonic static random access memory (pSRAM) bitcell design using fabrication-friendly photonic components. The proposed pSRAM overcomes the key limitations of traditional electrical SRAMs,…
Recent years have seen a rapid increase in research activity in the field of DRAM-based Processing-In-Memory (PIM) accelerators, where the analog computing capability of DRAM is employed by minimally changing the inherent structure of DRAM…
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the…
Fine-grained sparsity promises higher parametric capacity without proportional per-token compute, but often suffers from training instability, load balancing, and communication overhead. We introduce STEM (Scaling Transformers with…
In-memory computing promises to overcome the von Neumann bottleneck in computer systems by performing computations directly within the memory. Previous research has suggested using Spin-Transfer Torque RAM (STT-RAM) for in-memory computing…