Related papers: Algorithms for determining resistances in quantum …
Mechanical deformations of graphene induce a term in the Dirac Hamiltonian which is reminiscent of an electromagnetic vector potential. Strain gradients along particular lattice directions induce local pseudomagnetic fields and substantial…
High quality epitaxial NbN/MgO/NbN Josephson junctions have been realized with MgO barriers up to a thickness of d=1 nm. The junction properties coherently scale with the size of barrier, and low critical current densities down to 3…
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…
Electrons in clean macroscopic samples of graphene exhibit an astonishing variety of quantum phases when strong perpendicular magnetic field is applied. These include integer and fractional quantum Hall states as well as symmetry broken…
Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic…
In this work, fundamental results for carrier statistics in graphene 2-dimensional sheets and nanoscale ribbons are derived. Though the behavior of intrinsic carrier densities in 2d graphene sheets is found to differ drastically from…
We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. A semiclassical approximation for the conductance is derived in terms of the various snake-like trajectories at…
Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently…
We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima…
Here we present a flexible strategy to realize robust nanomaterials exhibiting valence electronic structures whose fundamental physics is described by the SSH-Hamiltonian. These solid-state materials are realized using atomically precise…
The results of the simulations by Monte Carlo method of graphene with structural defects are presented. The calculations are performed within an effective quantum field theory with non-compact $3\hm + 1$--dimensional Abelian gauge field and…
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between…
Transport measurement of electron optics in monolayer graphene p-n junction devices has been traditionally studied with negative refraction and chiral transmission experiments in Hallbar magnetic focusing set-ups. We show direct signatures…
Exploiting quantum interference of charge carriers, epitaxial graphene grown on silicon carbide emerges as a game-changing platform for ultra-sensitive bolometric sensing, featuring an intrinsic resistive thermometer response unmatched by…
Amongst the wide spectrum of potential applications of graphene, ranging from transistors and chemical-sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most…
Quantum Hall phases have recently emerged as a platform to investigate non-Hermitian topology in condensed-matter systems. This platform is particularly interesting due to its tunability, which allows to modify the properties and topology…
We have realized nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The…
In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero…
We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a…
We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus…