Related papers: Ultra-sharp lateral $p\text{-}n$ junctions in modu…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…
Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as whispering gallery modes and Veselago lensing. Bilayer…
We study by first-principles calculations a densely packed island of organic molecules (F4TCNQ) adsorbed on graphene. We find that with electron doping the island naturally forms a p-n junction in the graphene sheet. For example, a doping…
Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport…
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as…
In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of…
We achieve fine tuning of graphene effective doping by applying ultrahigh pressures (> 10 GPa) using Atomic Force Microscopy (AFM) diamond tips. Specific areas in graphene flakes are irreversibly flattened against a SiO2 substrate. Our work…
Graphene-based photodetectors have demonstrated mechanical flexibility, large operating bandwidth, and broadband spectral response. However, their linear dynamic range (LDR) is limited by graphene's intrinsichot-carrier dynamics, which…
Hybrid graphene-superconductor devices have attracted much attention since the early days of graphene research. So far, these studies have been limited to the case of diffusive transport through graphene with poorly defined and modest…
In the pursuit of developing routes to enhance magnetic Kitaev interactions in {\alpha}-RuCl3, as well as probing doping effects, we investigate the electronic properties of {\alpha}-RuCl3 in proximity to graphene. We study…
Edge-contacted superconductor-graphene-superconductor Josephson junction have been utilized to realize topological superconductivity, which have shown superconducting signatures in the quantum Hall regime. We perform the first-principles…
A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p…
The focusing of electric current by a single \textit{p-n} junction in graphene is predicted. We show that precise focusing can be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values,…
We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 {\Omega} per square over macroscopic scales, and obtained…
We study quasi-particle transmission through an $n $-$p$ junction in a graphene irradiated by an electromagnetic field (EF). In the absence of EF the electronic spectrum of undoped graphene is gapless, and one may expect the perfect…
In a graphene {\em pn} junction at high magnetic field, unidirectional "snake states" are formed at the {\em pn} interface. In a clean {\em pn} junction, each snake state exists in one of the valleys of the graphene band structure, and the…
We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectric film using Wentzel-Kramers-Brillouin approximation. Both…
We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…
Focusing of electron waves in graphene p-n junctions is a striking manifestation of fermionic negative refraction. We analyze lensing in smooth p-n junctions and find that it differs in several interesting ways from that in the previously…
We study the superconducting correlations induced in graphene when it is placed between two superconductors, focusing in particular on the supercurrents supported by the 2D system. For this purpose we make use of a formalism placing the…