Related papers: Toward accurate polarization estimation in nanosco…
Ferroelectric thin films present a powerful platform for next generation computing and memory applications. However, domain morphology and dynamics in buried ferroelectric stacks have remained underexplored, despite the importance for real…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering…
We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm…
Ferroelectric switching in BiFeO$_3$ multiferroic thin films with intrinsic ``stripe-like'' and ``bubble-like'' polydomain configurations was studied by piezoresponse force microscopy. Using the local electric field applied by a scanning…
A reduction of polarization in ultra-thin ferroelectric films appears to be fundamental to ferroelectricity at the nanoscale. For the model system PbTiO3 on SrTiO3, we report observation of the polarization vs. thickness relation. Distinct…
Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported…
This study demonstrates the effectiveness of AFE-PUND, a revisited Positive Up Negative Down (PUND) protocol for characterizing antiferroelectric (AFE) materials, in analyzing $ZrO_2$ films across different thicknesses, revealing key…
The behavior of ferroelectricity at the nanoscale is the focus of increasing research activity because of intense interest in the fundamental nature of spontaneous order in condensed-matter systems and because of the many practical…
Strong coupling between electrical and mechanical phenomena and the presence of switchable polarization have enabled applications of ferroelectric materials for nonvolatile memories (FeRAM), data storage, and ferroelectric lithography.…
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric…
The ground-state polarization of PbTiO3 thin films is studied using a microscopic effective Hamiltonian with parameters obtained from first-principles calculations. Under short-circuit electrical boundary conditions, (001) films with…
For over 70 years, ferroelectric materials have been remaining one of the central research topics for condensed matter physics and material science, the interest driven both by fundamental science and applications. However, ferroelectric…
Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions…
Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…
In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180{\deg}domain walls, where the out-of-plane oriented polarization is reversed.…
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down,…
The contrast mechanism for the visualization of ferroelectric domain boundaries with lateral force microscopy is generally assumed to be caused by mechanical deformation of the sample due to the converse piezoelectric effect. We show,…
In this work we use a phenomenological theory of ferroelectric switching in BiFeO$_3$ thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a…