Related papers: Variable and orbital-dependent spin-orbit field or…
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…
The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to…
Double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by…
A spin-orbit qubit is a hybrid qubit that contains both orbital and spin degrees of freedom of an electron in a quantum dot. Here we study the exchange coupling between two spin-orbit qubits in a nanowire double quantum dot (DQD) with…
We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated…
On-chip magnets can be used to implement relatively large local magnetic field gradients in na- noelectronic circuits. Such field gradients provide possibilities for all-electrical control of electron spin-qubits where important coupling…
Strong `spin'-orbit coupled one-dimensional hole gas is achievable in a Ge nanowire in the presence of a strong magnetic field. The strong magnetic field lifts the two-fold degeneracy in the hole subband dispersions, so that the effective…
We consider a one-dimensional spin-orbit-coupled nanowire quantum dot, driven by external electric and magnetic fields, and theoretically formulate an electric mechanism to interfere its electron orbits. Owing to the existence of spin-orbit…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
Energetic particle fluxes in the outer magnetosphere present a significant challenge to modelling efforts as they can vary by orders of magnitude in response to solar wind driving conditions. In this article, we demonstrate the ability to…
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin…
We consider an electron confined in a gated nanowire quantum dot (NQD) with arbitrarily strong spin-orbit coupling (SOC) and weak static magnetic field, and treat the latter as a perturbation to seek the maximal spin-motion entangled states…
We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD). Our model describes a DQD formed in semiconductor nanowire with longitudinal potential modulated by local…
We investigate double quantum dots defined by electrostatic gating in semiconductor PbTe nanowire devices. We perform transport measurements to obtain charge stability diagrams distinguished by negligible separation between paired triple…
We demonstrate experimentally that non-collinear intrinsic spin-orbit magnetic fields can be realized in a curved carbon nanotube two-segment device. Each segment, analyzed in the quantum dot regime, shows near four-fold degenerate shell…
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by…
Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…
A propagation matrix method is proposed to investigate spin-resolved electronic transport in single finger-gate (SFG) and double finger-gate (DFG) controlled split-gate quantum devices. We show how the interplay of the Rashba and…
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…