Related papers: Microwave-frequency scanning gate microscopy of a …
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot…
Intervalley mixing between conduction-band states in low-dimensional Si/SiGe heterostructures induces splitting between nominally degenerate energy levels. The symmetric double-valley effective mass approximation and the empirical…
Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show…
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…
A small quantum dot containing approximately 20 electrons is realized in a two-dimensional electron system of an AlGaAs/GaAs heterostructure. Conventional transport and microwave spectroscopy reveal the dot's electronic structure. By…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of…
The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most…
We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicted spatially-structured electron phases, the probe uses a…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
We propose a spin-sensitive scanning probe microscopy experiment on double quantum dots in Pauli blockade conditions. Electric spin resonance is induced by an AC voltage applied to the scanning gate which induces lifting of the Pauli…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
We explore the energetics of microwaves interacting with a double quantum dot photodiode and show wave-particle aspects in photon-assisted tunneling. The experiments show that the single photon energy sets the relevant absorption energy in…
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an…
Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that…
The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field…
Transport spectroscopy of two-spin states in a double quantum dot can be performed by an AC electric field which tunes the energy detuning. However, a problem arises when the transition rate between the states is small and, consequently,…
We report the experimental realization of a quantum silicon carbide microscope (QSiCM) and demonstrate its functionality by imaging magnetic fields generated by electrical currents. We employ a dual-frequency sensing protocol to enhance the…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…