Related papers: Highly efficient UV detection in a metal-semicondu…
We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-oriented epitaxial \b{eta}-Ga2O3-films were grown on c-plane…
In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire…
Graphene is an ideal material for hot-electron bolometers, due to its low heat capacity and weak electron-phonon coupling. Nanostructuring graphene with quantum dot constrictions yields detectors with extraordinarily high intrinsic…
We report on the integration of large area CVD grown single- and bilayer graphene transparent conductive electrodes (TCEs) on amorphous silicon multispectral photodetectors. The broadband transmission of graphene results in 440% enhancement…
Optical excitation and subsequent decay of graphene plasmons can produce a significant increase in charge-carrier temperature. An efficient method to convert this temperature elevation into a measurable electrical signal at room temperature…
The escalating demand for ultraviolet (UV) sensing in space exploration, environmental monitoring, and agricultural productivity necessitates detectors that are both environmentally and mechanically resilient. Diamond, featuring its high…
We report on the development of coatings for a CCD detector optimized for use in a fixed dispersion UV spectrograph. Due to the rapidly changing index of refraction of Si, single layer broadband anti-reflection coatings are not suitable to…
Metamaterials have recently established a new paradigm for enhanced light absorption in state-of-the-art photodetectors. Here, we demonstrate broadband, highly efficient, polarization-insensitive, and gate-tunable photodetection at room…
Exploiting quantum interference of charge carriers, epitaxial graphene grown on silicon carbide emerges as a game-changing platform for ultra-sensitive bolometric sensing, featuring an intrinsic resistive thermometer response unmatched by…
Characteristics improvement of photon/plasmon detectors have been the subject of several investigations in the area of plasmonic integrated circuits. Among different suggestions, Silicon-based Metal-Semiconductor-Metal (MSM) waveguides are…
We report on room temperature THz detection by means of antenna-coupled field effect transistors fabricated by using epitaxial graphene grown on silicon carbide substrate. Two independent detection mechanisms are found: plasma wave…
At present, ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite of this, the performance of current UV sensors is…
Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band…
Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon…
The effective and convenient detection of single photons via advanced detectors with a large active area is becoming significant for quantum and classical applications. This work demonstrates the fabrication of a superconducting microstrip…
The integrated optical circuit is a promising architecture for the realization of complex quantum optical states and information networks. One element that is required for many of these applications is a high-efficiency photon detector…
Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to…
The epitaxial growth of two-dimensional (2D) $\beta-In_2Se_3$ material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 nm) and very thin films, down to two quintuple layers (2…
Silicon carbide detectors exhibit good detection performance and are being considered for detection applications. However, the presence of surface electrode of detector limits the application of low-penetration particle detectors,…
A high-performance fast response deep ultraviolet (UV) photodetectors with interdigitated Ti/Au planar electrodes using a lithography technology has fabricated on homoepitaxial diamond. The device shows a high ultraviolet photocurrent at…