Related papers: Radiation hardness study on a CMOS pixel sensor fo…

Silicon carbide is a promising material for radiation-hard detectors due to its wide bandgap, low leakage current, high critical electric field, and high saturation velocity. A key obstacle for its use in high-radiation environments is the…

We have used a mesh experiment in order to measure the sub-pixel structure of the EPIC MOS CCDs on-board the XMM/NEWTON satellite. The EPIC MOS CCDs have 40 $\mu$m-square pixels which have an open electrode structure in order to improve the…

A single-photon CMOS image sensor design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times…

We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to…

Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of…

The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules…

Hybrid silicon pixel detectors are currently used in the innermost tracking system of the Compact Muon Solenoid (CMS) experiment. Radiation tolerance up to fluences expected for a few years of running of the Large Hadron Collider (LHC) has…

CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low…

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…

When an X-ray is incident onto the silicon absorber array of a detector, it liberates a large number of electrons, which tend to diffuse outward into what is referred to as the charge cloud. This number can vary from tens to thousands…

CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex…

Pixel tracking detectors at upcoming collider experiments will see unprecedented charged-particle densities. Real-time data reduction on the detector will enable higher granularity and faster readout, possibly enabling the use of the pixel…

X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a…

In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two…

This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The…

The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of high resolution, low material, fast readout and low power. The Monolithic Active Pixel Sensor (MAPS) technology has been…

The Circular Electron-Positron Collider (CEPC), as the next-generation electron-positron collider, is tasked with advancing not only Higgs physics but also the discovery of new physics. Achieving these goals requires high-precision…

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which…