Related papers: Physical based compact model of Y-Flash memristor …
Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…
The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments,…
As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…
This work presents a comprehensive analysis of the variability and reliability of the resistive switching (RS) behavior in Prussian Blue (a mixed-valence iron(III/II) hexacyanoferrate compound) thin films, used as the active layer. These…
Neuromorphic in-memory computing requires area-efficient architecture for seamless and low latency parallel processing of large volumes of data. Here, we report a compact, vertically integrated/stratified field-effect transistor (VSFET)…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable…
We have modified a commercial NOR flash memory array to enable high-precision tuning of individual floating-gate cells for analog computing applications. The modified array area per cell in a 180 nm process is about 1.5 um^2. While this…
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…
Highly efficient information processing in brain is based on processing and memory components called synapses, whose output is dependent on the history of the signals passed through them. Here we have developed an artificial synapse with…
CMOS technology and its continuous scaling have made electronics and computers accessible and affordable for almost everyone on the globe; in addition, they have enabled the solutions of a wide range of societal problems and applications.…
Existing compact models for memristive devices (including RRAM and CBRAM) all suffer from issues related to mathematical ill-posedness and/or improper implementation. This limits their value for simulation and design and in some cases,…
Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…
In-memory computing is a promising alternative to traditional computer designs, as it helps overcome performance limits caused by the separation of memory and processing units. However, many current approaches struggle with unreliable…
Software managed byte-addressable hybrid memory systems consisting of DRAMs and NVMMs offer a lot of flexibility to design efficient large scale data processing applications. Operating systems (OS) play an important role in enabling the…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
Non-equilibrium molecular-scale dynamics, where fast electron transport couples with slow chemical state evolution, underpins the complex behaviors of molecular memristors, yet a general model linking these dynamics to neuromorphic…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
Molecule-based devices are envisioned to complement silicon devices by providing new functions or already existing functions at a simpler process level and at a lower cost by virtue of their self-organization capabilities. Moreover, they…
The conventional von Neumann architecture has been revealed as a major performance and energy bottleneck for rising data-intensive applications. %, due to the intensive data movements. The decade-old idea of leveraging in-memory processing…