Related papers: Amorphous-silicon visible-light detector integrate…
With a rapidly growing amount of data generated and processed, a search for more efficient components and architectures such as neuromorphic computing that are able to perform a more and more complex operations in more efficient way…
In this paper, a silicon rich nitride-lithium niobate on insulator (SRN-LNOI) hybrid platform with waveguides and several key components is proposed. The propagation loss of the silicon rich nitride-lithium niobate rib-loaded waveguide (1…
Carbon based optoelectronic devices promise to revolutionize modern integrated circuits by combining outstanding electrical and optical properties into a unified technology. By coupling nanoelectronic devices to nanophotonic structures…
Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have shown low linear loss, negligible nonlinear loss, and high power handling over traditional silicon photonics. To achieve high-density photonic integration and high…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible…
Detecting non-classical light is a central requirement for photonics-based quantum technologies. Unrivaled high efficiencies and low dark counts have positioned superconducting nanowire single photon detectors (SNSPDs) as the leading…
Visible-light integrated photonics enables compact platforms for sensing, precision metrology, and free-space data links at visible wavelengths. However, many applications remain limited by the lack of high-speed and robust modulators in…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…
The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…
Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for…
Characteristics improvement of photon/plasmon detectors have been the subject of several investigations in the area of plasmonic integrated circuits. Among different suggestions, Silicon-based Metal-Semiconductor-Metal (MSM) waveguides are…
The rapid development of quantum information processors has accelerated the demand for technologies that enable quantum networking. One promising approach uses mechanical resonators as an intermediary between microwave and optical fields.…
Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for…
In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of…
Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission…
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…