Related papers: Memristor Compact Model with Oxygen-Vacancy Concen…
We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…
A system of drift-diffusion equations for the electron, hole, and oxygene vacancy densities in a semiconductor, coupled to the Poisson equation for the electric potential, is analyzed in a bounded domain with mixed Dirichlet-Neumann…
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…
Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the…
Compact models of memristors are essential for simulating large-scale neuromorphic systems, yet they often do not include description of complex dynamics like volatile relaxation and synaptic plasticity. We introduce a modular,…
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance…
We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different…
Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged…
The linear (proportional to local vacancy concentration) term in specific resistance of the material does not directly contribute to the change of memristor's total resistance when the vacancies are redistributed inside while keeping their…
Vacancy dynamics in oxides are vital for understanding redox reactions and resulting memristive effects or catalytic activity. We present a method to track and drive vacancies which we apply to metadynamics simulation of oxygen vacancies…
In the present work, we investigate oxygen vacancies (V$_\mathrm{O}$) in Co$_3$O$_4$, both in the bulk phase and under liquid-phase ethylene glycol oxidation, by combining theoretical and experimental techniques. Density functional theory…
We address the long-standing question of the nature of oxygen vacancies in strontium titanate, using a combination of density functional theory and dynamical mean-field theory (DFT+DMFT) to investigate in particular the effect of…
Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combination of experiments and theoretical simulations, OV dynamics…
In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film containing a region which is highly…
Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial…
An instationary drift-diffusion system for the electron, hole, and oxygen vacancy densities, coupled to the Poisson equation for the electric potential, is analyzed in a bounded domain with mixed Dirichlet-Neumann boundary conditions. The…
Neuromorphic computing aims to develop energy-efficient devices that mimic biological synapses. One promising approach involves memristive devices that can dynamically adjust their electrical resistance in response to stimuli, similar to…
Memristive system models have previously been proposed to describe ionic memory resistors. However, these models neglect the mass of ions and repulsive forces between ions and are not well formulated in terms of semiconductor and ionic…