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Advancing the development of spin-wave devices requires high-quality low-damping magnetic materials where magnon spin currents can propagate efficiently and interact effectively with local magnetic textures. We show that magnetic domain…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
Magnetic skyrmions are envisioned as carriers of information in racetrack storage devices. Unfavorably, the skyrmion Hall effect hinders the fast propagation of skyrmions along an applied electric current and limits the device's maximum…
Mechanosensitive ion nanochannels regulate transport by undergoing conformational changes within nanopores. However, achieving precise control over these conformational states remains a major challenge for both artificial soft or solid…
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a…
Stick-slip -- the sequence of mechanical instabilities through which a slider advances on a solid substrate -- is pervasive throughout sliding friction, from nano to geological scales. Here we suggest that trapped cold ions in an optical…
Unimolecular current rectifiers are fundamental building blocks in organic electronics. Rectifying behavior has been identified in numerous organic systems due to electron-hole asymmetries of orbital levels interfaced by a metal electrode.…
Accelerated muon beams have been considered for next-generation studies of high-energy lepton-antilepton collisions and neutrino oscillations. However, high-brightness muon beams have not yet been produced. The main challenge for muon…
Efficient transport of cold atoms or ions is a subject of increasing concern in many experimental applications reaching from quantum information processing to frequency metrology. For the scalable quantum computer architectures based on the…
We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic…
We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the…
The paper investigates the dissipation tensor $\varepsilon_{ij}$ in wall turbulence. Available DNS data are examined to illustrate the differences in the anisotropy of the dissipation tensor $\varepsilon_{ij}$ with respect to the anisotropy…
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the…
We calculate the tunnelling current through a Fabry-P\'{e}rot interferometer in the fractional quantum Hall regime. Within linear response theory (weak tunnelling but arbitrary source-drain voltage) we find a general expression for the…
For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we…
Application of electron cooling at ion energies above a few GeV has been limited due to reduction of electron cooling efficiency with energy and difficulty in producing and accelerating a high-current high-quality electron beam. A…
Low internal friction coatings are key components of advanced technologies such as optical atomic clocks and high-finesse optical cavity and often lie at the forefront of the most advanced experiments in Physics. Notably, increasing the…
Motivated by recent experimental findings, we study transport in a simple phenomenological model of a quantum Hall edge system with a gate-voltage controlled constriction lowering the local filling factor. The current backscattered from the…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…