Related papers: A Magnetoelectric Memory Device Based on Pseudo-Ma…
Ultrafast manipulation of magnetic states is one of the necessities in modern data storage technology. Quantum antiferromagnets are promising candidates in this respect. The orientation of the order parameter, the sublattice magnetization,…
We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be…
Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2,3,4, FM semiconductors5, multiferroics6,7,8 and magnetoelectric (ME)…
Single-molecule magnets (SMMs) with chemically tailorable properties are potential building blocks for quantum computing, high-density magnetic memory, and spintronics.1 2 3,4 These applications require isolated or few molecules on…
Electric-field control of magnetization promises to substantially enhance the energy efficiency of device applications ranging from data storage to solid-state cooling. However, the intrinsic linear magnetoelectric effect is typically small…
With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing fast and non-volatile superconducting memory…
Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by careful…
Antiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared to their ferromagnetic counterparts. While nanoscale thin film materials are key to the…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
Spin-memory loss (SML) of electrons traversing ferromagnetic-metal/heavy-metal (FM/HM), FM/normal-metal (FM/NM) and HM/NM interfaces is a fundamental phenomenon that must be invoked to explain consistently large number of spintronic…
There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…
This work presents a study on the computational homogenization of electro-magneto-mechanically coupled problems through the Virtual Element Method (VEM). VE-approaches have great potential for the homogenization of the physical properties…
Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling…
It is widely known that antiferromagnets (AFMs) display a high frequency response in the terahertz (THz) range, which opens up the possibility for ultrafast control of their magnetization for next generation data storage and processing…
Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…
Ferroelectric non-volatile capacitance-based memories enable non-destructive readout and low-power in-memory computing with 3D stacking potential. However, their limited memory window (1-10 fF/{\mu}m) requires material-device-circuit…
Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable…