Related papers: Spin valve effect in two-dimensional VSe$_2$ syste…

The paper discusses a model of Van der Waals crystals in which band-gap structures do not form. An effect of strong and chaotic electron-electron repulsion, which was excluded from consideration in the traditional approach, is taken into…

The electronic structure of semiconducting 2D materials such as transition metal dichalcogenides (TMDs) is known to be tunable by its environment, from simple external fields applied with electrical contacts up to complex van der Waals…

Lateral heterostructures of two-dimensional (2D) materials, integrating different phases or materials into a single piece of nanosheet, have attracted intensive research interests in the past few years for high-performance electronic and…

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal…

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…

We show how a broad class of lattice spin-1/2 models with angular- and distance-dependent couplings can be realized with cold alkali atoms stored in optical or magnetic trap arrays. The effective spin-1/2 is represented by a pair of atomic…

Using density functional theory, we have investigated the structural, electronic and magnetic properties of infinitely periodic organometallic vanadium-anthracene ($[V_2Ant]_\infinity)$ and $[V_4(BNAnt)_2]_\infinity$(where BNAnt is B-N…

Layered 2D van der Waals materials, such as transition metal dichalcogenides, are promising for nanoscale spintronic and optoelectronic applications. Harnessing their full potential requires understanding both intrinsic transport and the…

Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have…

The study of magnetic phenomena in low-dimensional systems has largely explored after the discovery of two-dimensional (2D) magnetic materials, such as CrI3 and Cr2Ge2Te6 in 2017. These materials presents intrinsic magnetic order,…

The anisotropic spin splitting in unconventional magnets opens new opportunities for realizing spintronic functionalities without relying on net magnetization or relativistic spin-orbit coupling. Here, we propose a spin valve and a spin…

In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and control of time-reversal symmetry by optical or magnetic…

The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean…

A superconducting double spin valve device is proposed. Its operation takes advantage of the interplay between the spin-filtering effect of ferromagnetic insulators and superconductivity-induced out-of-equilibrium transport. Depending on…

A two-dimensional electron gas (2DEG) in two-valley semiconductors has two discrete degrees of freedom given by the spin and valley quantum numbers. We analyze the zero-temperature magnetic instabilities of two-valley semiconductors with…

Pristine graphene is potentially an ideal medium to transport spin information. Proximity effects, where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions, can also be used in…

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…

Covalent-polar semiconductors that show intrinsic two-dimensional (2D) vertical polarization present new device opportunities. These materials differ from ordinary ferroelectrics in that they are able to maintain polarization normal to a…

The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization. Here, we propose a way to realize valley polarization in two-dimensional (2D) tetragonal…

Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the…