Related papers: A high-mobility hole bilayer in a germanium double…
A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the…
We show that a quantum Hall bilayer with the total filling $\nu = 1$ should exhibit a dynamical regime similar to the flux-flow in large Josephson junctions. This analogy may explain a conspicuous peak in the interlayer tunneling…
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped…
The Hall-plateau width and the activation energy were measured in the bilayer quantum Hall state at filling factor \nu=2, 1 and 2/3, by changing the total electron density and the density ratio in the two quantum wells. Their behavior are…
The band-inverted electron-hole bilayers, such as InAs/GaSb, are an interesting playground for the interplay of quantum spin Hall effect and correlation effects because of the small density of electrons and holes and the relatively small…
Tunneling spectroscopy reveals evidence for interlayer electron-hole correlations in quantum Hall bilayer two-dimensional electron systems at layer separations near, but above, the transition to the incompressible exciton condensate at…
We study the two-dimensional spatially separated electron-hole system with density imbalance at absolute zero temperature. By means of the mean-field theory, we find that the Fulde-Ferrell state is fairly stabilized by the order parameter…
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes…
We study the evolution of low-temperature magnetoresistance in double quantum wells in the region below 1 Tesla as the applied current density increases. A flip of the magneto-intersubband oscillation peaks, which occurs as a result of the…
We make a number of precise experimental predictions for observing the various magnetic phases and the quantum phase transitions between them in the $\nu$=2 bilayer quantum Ha ll system. In particular, we analyze the effect of an external…
We propose an asymmetric double quantum well structure with a common continuum and investigate the effect of resonant tunneling on the control of coherent electron population transfer between the two quantum wells. By numerically solving…
Landau level gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy measurements of LL gaps in double-gated suspended BLG with…
We report results of systematic measurements of charge transport properties of the 20.5nm wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure transport is…
We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed…
We study the transport properties of $HgTe$-based quantum wells containing simultaneously electrons and holes in magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found…
In this paper the 3D- and 2D- behavior of wide quantum wells which consist of one period of a PbTe nipi-structure is studied theoretically and experimentally. A simple model combines the 2D- subband levels and the 3D-Landau levels in order…
We study effects of tilted magnetic fields on energy levels in a double-quantum-well (DQW) system, focusing on the coupling of subbands and Landau levels (LLs). The subband-LL coupling induces anticrossings between LLs, manifested directly…
The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was…
We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample…
We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly…