Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs

R. Leturcq; D. L'Hote; R. Tourbot; C. J. Mellor; M. Henini

doi:10.1103/PhysRevLett.90.076402

Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs

Strongly Correlated Electrons 2009-11-10 v2 Mesoscale and Nanoscale Physics

Authors: R. Leturcq , D. L'Hote , R. Tourbot , C. J. Mellor , M. Henini

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Abstract

We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly when the hole density p_s is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p_s. The noise scales with the resistance, $S_R/R^2 \sim R^{2.4}$ , as for a second order phase transition such as a percolation transition. The p_s dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p* which is lower than the observed MIT critical density p_c.

Keywords

resistance noise two-dimensional hole system metal-insulator transition GaAs quantum well scaling percolation critical behavior

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@article{arxiv.cond-mat/0301222,
  title  = {Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs},
  author = {R. Leturcq and D. L'Hote and R. Tourbot and C. J. Mellor and M. Henini},
  journal= {arXiv preprint arXiv:cond-mat/0301222},
  year   = {2009}
}

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4 pages, 4 figures, to be published in Phys. Rev. Lett

Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs

Abstract

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