Related papers: Charge-noise induced dephasing in silicon hole-spi…
Spins confined in quantum dots are a leading candidate for solid-state quantum bits that can be coherently controlled by optical pulses. There are, however, many challenges to developing a scalable multibit information processing device…
The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular…
Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots…
Charge noise has been one of the main issues in realizing high fidelity two-qubit quantum gates in semiconductor based qubits. Here, we study the influence of quasistatic noise in quantum dot detuning on the controlled phase gate for spin…
We demonstrate that an optically driven spin of a carrier in a quantum dot undergoes indirect dephasing via conditional optically induced charge evolution even in the absence of any direct interaction between the spin and its environment. A…
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients…
Several experiments have shown qubit coherence decay of the form $\mathrm{exp}[-(t/T_2)^\alpha]$ due to environmental charge-noise fluctuations. We present a microscopic description for temperature dependences of the parameters $T_2$ and…
Dephasing of spins is a major roadblock to scaling up the size of quantum computing systems. We explore the possibility of utilizing highly disordered environments which are in the Many-Body Localized phase to arrest this dephasing. We…
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…
We study the phonon-induced dephasing of the exciton state in a quantum dot excited by a sequence of ultra-short pulses. We show that the multiple-pulse control leads to a considerable improvement of the coherence of the optically excited…
Hole spin relaxation in [001] strained asymmetric Si/Si$_{0.7}$Ge$_{0.3}$ (Ge/Si$_{0.3}$Ge$_{0.7}$) quantum wells is investigated in the situation with only the lowest hole subband being relevant. The effective Hamiltonian of the lowest…
Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the…
High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave…
We review recent studies on spin decoherence of electrons and holes in quasi-two-dimensional quantum dots, as well as electron-spin relaxation in nanowire quantum dots. The spins of confined electrons and holes are considered major…
We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…
We investigate shot noise of photon-excited electron-hole pairs in open multi-terminal, multi-channel chaotic dots. Coulomb interactions in the dot are treated self-consistently giving a gauge-invariant expression for the finite frequency…
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not…
Charge noise remains the primary obstacle to the development of quantum information technologies with semiconductor spin qubits. We use an exact analytical calculation to determine the effects of quasistatic charge noise on a ring of three…
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that…