Related papers: TA-LRW: A Replacement Policy for Error Rate Reduct…
Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…
This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical…
Modern mobile CPU software pose challenges for conventional instruction cache replacement policies due to their complex runtime behavior causing high reuse distance between executions of the same instruction. Mobile code commonly suffers…
Reinforcement Learning (RL) has become essential for eliciting complex reasoning capabilities in Large Language Models (LLMs). However, the substantial memory overhead of storing Key-Value (KV) caches during long-horizon rollouts acts as a…
Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding…
As SRAM-based caches are hitting a scaling wall, manufacturers are integrating DRAM-based caches into system designs to continue increasing cache sizes. While DRAM caches can improve the performance of memory systems, existing DRAM cache…
Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…
This paper summarizes our work on characterizing application memory error vulnerability to optimize datacenter cost via Heterogeneous-Reliability Memory (HRM), which was published in DSN 2014, and examines the work's significance and future…
The ramp reversal memory (RRM) is a non-volatile memory effect previously observed in correlated oxides exhibiting temperature-driven metal-insulator transitions (MITs). In essence, when a system displaying RRM is heated to a specific…
One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by…
We propose a lightweight scheme where the formation of a data block is changed in such a way that it can tolerate soft errors significantly better than the baseline. The key insight behind our work is that CNN weights are normalized between…
The increased memory demands of workloads is putting high pressure on Last Level Caches (LLCs). Unfortunately, there is limited opportunity to increase the capacity of LLCs due to the area and power requirements of the underlying SRAM…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
This article introduces a novel family of decentralised caching policies, applicable to wireless networks with finite storage at the edge-nodes (stations). These policies, that are based on the Least-Recently-Used replacement principle, are…
Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration density and reliability under process variations demand an…
Emerging analog resistive random access memory (RRAM) based on HfOx is an attractive device for non-von Neumann neuromorphic computing systems. The differences in temperature dependent conductance drift among cells hamper computing…
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…
Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…
In this paper, we study the thermodynamic cost associated with erasing a static random access memory. By combining the stochastic thermodynamics framework of electronic circuits with machine learning-based optimization techniques, we show…