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The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…

Triple Modular Redundancy (TMR) is a suitable fault tolerant technique for SRAM-based FPGA. However, one of the main challenges in achieving 100% robustness in designs protected by TMR running on programmable platforms is to prevent upsets…

The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…

In this work, we propose FUSE, a novel GPU cache system that integrates spin-transfer torque magnetic random-access memory (STT-MRAM) into the on-chip L1D cache. FUSE can minimize the number of outgoing memory accesses over the…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

Cache plays a critical role in reducing the performance gap between CPU and main memory. A modern multi-core CPU generally employs a multi-level hierarchy of caches, through which the most recently and frequently used data are maintained in…

Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising emerging non-volatile memory (NVM) technology with wide applications. However, the data recovery of STT-MRAM is affected by the diversity of channel raw bit error…

This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…

Performance and reliability are two prominent factors in the design of data storage systems. To achieve higher performance, recently storage system designers use DRAM-based buffers. The volatility of DRAM brings up the possibility of data…

Prompt caching is critical for reducing latency and cost in LLM inference: OpenAI and Anthropic report up to 50-90% cost savings through prompt reuse. Despite its widespread success, little is known about what constitutes an optimal prompt…

Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be…

Raw bit errors are common in NAND flash memory and will increase in the future. These errors reduce flash reliability and limit the lifetime of a flash memory device. We aim to improve flash reliability with a multitude of low-cost…

Whereas contemporary Error Correcting Codes (ECC) designs occupy a significant fraction of total die area in chip-multiprocessors (CMPs), approaches to deal with the vulnerability increase of CMP architecture against Single Event Upsets…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

This paper investigates intelligent replacement policies for improving the hit-rate of gigascale DRAM caches. Cache replacement policies are commonly used to improve the hit-rate of on-chip caches. The most effective replacement policies…

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…

NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…

Hardware neural networks that implement synaptic weights with embedded non-volatile memory, such as spin torque memory (ST-MRAM), are a major lead for low energy artificial intelligence. In this work, we propose an approximate storage…

Due to embedded systems` stringent design constraints, much prior work focused on optimizing energy consumption and/or performance. Since embedded systems typically have fewer cooling options, rising temperature, and thus temperature…

Storage Class Memory (SCM) is a class of memory technology which has recently become viable for use. Their namearises from the fact that they exhibit non-volatility of data, similar to secondary storage while also having latencies…