Related papers: Giant Valley-Polarized Spin Splittings in Magnetiz…
Controlling the momentum of carriers in semiconductors, known as valley polarization, is a new resource for optoelectronics and information technologies. Materials exhibiting high polarization are needed for valley-based devices. Few-layer…
Magnetic field is a powerful tool for the manipulation of material's electronic and optical properties. In the domain of transition metal dichalcogenide monolayers, it allows one to unveil the spin, valley, and orbital properties of…
A theory of the valley and spin Hall effects and resulting accumulation of the valley and spin polarization is developed for ultraclean channels made of two-dimensional semiconductors where the electron mean free path due to the residual…
We report the detailed study of the influence of the spin and valley splittings on such physical observables of the two-dimensional disordered electron liquid as resistivity, spin and valley susceptibilities. We explain qualitatively the…
It has been generally accepted that the spin-orbit coupling effect in noncentrosymmetric materials leads to the band splitting and non-trivial spin polarization in the momentum space. However, in some cases, zero net spin polarization in…
We investigate the spin-valley polarization in MoTe$_2$ monolayer on (111) and (001) surfaces of ferromagnetic semiconductor EuO based on first-principles calculations. We consider surface reconstructions for EuO(111). We find that there is…
Recently, altermagnets demonstrate numerous newfangle physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, that are anticipated to enable innovative spintronic devices. However, the rare…
Spin splitting, or removal of spin degeneracy in the electronic energy band/level is often a measure of spin-orbit coupling strength and a way to manipulate spin degrees of freedom. We use first-principles simulations to predict giant spin…
The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are…
We calculate the magneto-optical conductivity and electronic density of states for silicene, the silicon equivalent of graphene, and similar crystals such as germanene. In the presence of a perpendicular magnetic field and electric field…
Transition metal dichalcogenides provide a platform for exploring spin-valley physics, offering a promising approach to electric-field-driven spin control for low-power spintronic and quantum devices. Here, we demonstrate…
Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and…
We study spin dependent phonomena in superconducting junctions in both ballistic and diffusive regimes. For ballistic junctions we study both ferromagnet / $s$- and d-wave superconductor junctions and two dimensional electron gas / s-wave…
The rich phenomenology of plasmonic excitations in the dichalcogenides is analyzed as a function of doping. The many-body polarization, the dielectric response function and electron energy loss spectra are calculated using an ab initio…
Monolayer Janus transition-metal dichalcogenides possess Ising- and Rashba-type spin-orbit-couplings (SOC), leading to intriguing spin splitting effects at K and K$'$, and around $\Gamma$ points across the wide energy range. Using…
Altermagnets (AM) are a recently discovered third class of collinear magnets, and have been attracting significant interest in the field of condensed matter physics. Here, based on first-principles calculations and theoretical analysis, we…
We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is…
In valleytronic devices, the valley transport of electrons can carry not only charge but also spin angular momentum (SAM) and orbital angular momentum (OAM). However, investigations on thermoelectric transport of OAM manipulated by valley…
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…
By measuring the angles at which the Landau levels overlap in tilted magnetic fields (the coincidence method), we determine the splitting of the conduction-band valleys in high-mobility two-dimensional (2D) electrons confined to AlAs…