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Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices. The two major difficulties are growth of high…

Avalanche photodiodes used for greenhouse gas sensing often use a mesa-structure that suffers from high surface leakage currents and edge breakdown. In this paper, we report 2-micron InGaAs/GaAsSb superlattice (SL) based planar PIN diodes…

Plasmonic nanolasers have ultrahigh lasing thresholds, especially those devices for which all three dimensions are truly subwavelength. Because of a momentum mismatch between the propagating light and localized optical field of the…

We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.

High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while emission out of the end facet of the nanowire was monitored in a 'head-on'…

Electrodes with higher transparency that can also align liquid crystals (LCs) are of high importance for improved costs and energy consumption of LC displays. Here we demonstrate for the first time alignment of liquid crystals on…

Nanophotonic objects like plasmonic nanoparticles and colloidal quantum dots can complement the functionality of molecular dyes in biomedical optics. However, their operation is usually governed by spontaneous processes, which results in…

A tunable nanoscale "zipper" laser cavity, formed from two doubly clamped photonic crystal nanobeams, is demonstrated. Pulsed, room temperature, optically pumped lasing action at a wavelength of 1.3 micron is observed for cavities formed in…

We present a system of room-temperature extended-cavity grating-diode lasers (ECDL) for production of light in the range 760-790nm. The extension of the tuning range towards the blue is permitted by the weak feedback in the cavity: the…

Localized surface plasmon resonances have recently attracted considerable attention due to their ability to dramatically enhance near-field optical intensities and boost nanoscale light-matter interactions. Here we demonstrate unambiguously…

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…

The optical properties of a concentric nanometer-sized spherical shell comprised of an (active) 3-level gain medium core and a surrounding plasmonic metal shell are investigated. Current research in optical metamaterials has demonstrated…

Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…

Nonlinear optical effects are used to generate coherent light at wavelengths difficult to reach with lasers. Materials periodically poled or nanostructured in the nonlinear susceptibility in three spatial directions are called 3D nonlinear…

The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…

We have observed significant changes in the edge emission of a luminescent solar concentrator device (LSC) consist of core shell Cd1-xZnxSe1-ySy quantum dots (QDs), and a monolayer of gold nanorods (GNRs) on the surface of LSC device. The…

GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just…

Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium…

We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices…

Deciphering the three-dimensional atomic structure of solid-solid interfaces in core-shell nanomaterials is the key to understand their remarkable catalytical, optical and electronic properties. Here, we probe the three-dimensional atomic…