1.5 {\mu}m Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode
Optics
2021-02-03 v1 Applied Physics
Abstract
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
Cite
@article{arxiv.2010.09306,
title = {1.5 {\mu}m Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode},
author = {Zijun Bian and Katherine J. Rae and Adam F. McKenzie and Ben C. King and Nasser Babazadeh and Guangrui Li and Jonathan R. Orchard and Neil D. Gerrard and Stephen Thoms and Donald A. McLaren and Richard J. E. Taylor and David Childs and Richard A. Hogg},
journal= {arXiv preprint arXiv:2010.09306},
year = {2021}
}
Comments
4 pages, 5 figures, journal submission for review