Related papers: A Light-Hole Quantum Well on Silicon
The selective confinement of light holes (LHs) in a tensile-strained germanium (Ge) quantum well is studied by mapping the electronic structure of Ge$_{1-x}$Sn$_x$/Ge/Ge$_{1-x}$Sn$_x$ heterostructures as a function of Sn content, residual…
Germanium-silicon-germanium (Ge/Si$_{x}$Ge$_{1-x}$) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where strain and quantum confinement strongly reshape the Ge valence…
In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD…
Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction…
We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$…
Strained Ge ($\epsilon$-Ge) and strained Si ($\epsilon$-Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrates, $\epsilon$-Ge and $\epsilon$-Si are…
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe…
The selective confinement of light-holes (LHs) is demonstrated by introducing a low-dimensional system consisting of highly tensile-strained Ge quantum well enabling the design of an ultrafast gate-defined spin qubit under the electric…
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical…
Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in…
Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons,…
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…
We have studied quantum-well-confined holes based on the Luttinger-model description for the valence band of typical semiconductor materials. Even when only the lowest quasi-two-dimensional (quasi-2D) subband is populated, the static spin…
Hole-based spin qubits in strained planar germanium quantum wells have received considerable attention due to their favourable properties and remarkable experimental progress. The sizeable spin-orbit interaction in this structure allows for…
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction which enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long…
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…
Planar germanium heterostructures hosting hole-spin qubits are among the leading platforms for scalable semiconductor-based quantum computing. Yet, device performance is hindered by significant quantum dot variability, which leads to…