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As memory scales down to smaller technology nodes, new failure mechanisms emerge that threaten its correct operation. If such failure mechanisms are not anticipated and corrected, they can not only degrade system reliability and…
The academic community has made outstanding achievements in researching the March algorithm. However, the current fault modeling method, which centers on fault primitives, cannot be directly applied to analyzing the March algorithm. This…
Impedance is one of the vital parameters that provides useful information for many power electronics related applications. A lot of impedance measurement methods in power electronics have been reported. However, a comprehensive…
Reliability has taken centre stage in the development of high-performance computing processors. A Surge of interest is noticeable in recent times in formulating fault and failure models, understanding failure mechanism and strategizing…
Conventional 6T SRAM is used in microprocessors in the cache memory design. The basic 6T SRAM cell and a 6 bit memory array layout are designed in LEdit. The design and analysis of key SRAM components, sense amplifiers, decoders, write…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
This paper discusses the possible introduction of hidden reliability defects during CMOS foundry fabrication processes that may lead to accelerated wearout of the devices. These hidden defects or hardware Trojans can be created by deviation…
SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…
Silent Errors within hardware devices occur when an internal defect manifests in a part of the circuit which does not have check logic to detect the incorrect circuit operation. The results of such a defect can range from flipping a single…
This paper summarizes our work on experimental characterization and analysis of reduced-voltage operation in modern DRAM chips, which was published in SIGMETRICS 2017, and examines the work's significance and future potential. We take a…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
Reliability has emerged as a key topic of interest for researchers around the world to detect and/or mitigate the side effects of decreasing transistor sizes, such as soft errors. Traditional solutions, like DMR and TMR, incur significant…
The aggressive scaling of technology may have helped to meet the growing demand for higher memory capacity and density, but has also made DRAM cells more prone to errors. Such a reality triggered a lot of interest in modeling DRAM behavior…
This paper summarizes the SoftMC DRAM characterization infrastructure, which was published in HPCA 2017, and examines the work's significance and future potential. SoftMC (Soft Memory Controller) is the first publicly-available DRAM testing…
Whereas contemporary Error Correcting Codes (ECC) designs occupy a significant fraction of total die area in chip-multiprocessors (CMPs), approaches to deal with the vulnerability increase of CMP architecture against Single Event Upsets…
Most work on one-shot devices assume that there is only one possible cause of device failure. However, in practice, it is often the case that the products under study can experience any one of various possible causes of failure. Robust…
Spin-Torque-Transfer RAM (STTRAM) is a promising technology however process variation poses serious challenge to sensing. To eliminate bit-to-bit process variation we propose a reference-less, destructive slope detection technique which…
DRAM is the primary technology used for main memory in modern systems. Unfortunately, as DRAM scales down to smaller technology nodes, it faces key challenges in both data integrity and latency, which strongly affect overall system…
Future extreme-scale computer systems may expose silent data corruption (SDC) to applications, in order to save energy or increase performance. However, resilience research struggles to come up with useful abstract programming models for…
Defects in crystalline materials control the properties of materials, and their characterization focuses our strategies to optimize performance. Electron microscopy has served as the backbone of our understanding of defect structure and…